ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The relationship between the surface morphology and strain relaxation is explored in strained InxGa1−xAs layers grown on GaAs by molecular beam epitaxy. In situ light scattering, detected simultaneously along [110] and [11¯0], reveals an asymmetric surface roughening which is consistent with ex situ scanning force microscopy. Transmission electron microscopy shows that strain relaxation by misfit dislocation formation occurs before the surface roughening is detected, for In0.18Ga0.82As films grown at 490 °C. © 1995 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.115369
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