Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 7108-7117
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The generation of the backscattered electron (BSE) contrast from topographic marks is investigated applying single-scattering and diffusion theories of electron backscattering. It is found that a combined model, which accounts for both single-scattering and diffusion fractions of electron backscattering, has the potential to explain our recent experimental results. The combined model predicts that the BSE contrast from an isolated topographic mark (e.g., V groove, trench) is a universal function of a dimensionless parameter, the ratio of the mark depth to the full electron range. This is also confirmed by our experimental results. Our model reveals the basic trends for the BSE contrast improvement and is capable of predicting the optimal conditions for any topographic mark detection. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363723
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