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  • 1
    Electronic Resource
    Electronic Resource
    Effect of structure and morphology on resistive loss at 10 GHz of the large-area laser-deposited YBa2Cu3O7 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1165-1170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three large-area YBa2Cu3O7(YBCO) superconducting thin films have been laser-deposited under almost identical conditions. However, the microwave surface resistance Rs of the films deviated greatly, they are 280 μΩ, 3.78 mΩ, and 97 mΩ, respectively. It was found that the structure and morphology of the films greatly influence the resistive losses at 10 GHz and 77 K of the YBCO thin films. Different loss mechanisms were discussed. For high Rs, the large angle grain boundaries were the dominate defect in the thin films and increased the Rs of the film markedly. For low Rs, it was mainly due to the misaligned "123'' grains in the thin films and the intrinsic loss. For Rs up to the mΩ range, besides the misaligned 123 grains, domain boundaries and nonsuperconducting outgrowths of different sizes appeared and this caused the rise of Rs value. All these results were given experimentally and discussed theoretically. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358981
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  • 2
    Electronic Resource
    Electronic Resource
    Probing of the pairing state of HTSCs utilizing a-b plane magnetization anisotropy (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6344-6344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed measurements of the a-b plane longitudinal and transverse magnetization anisotropy on an untwinned, high quality single crystal of LuBa2Cu3O7−x in magnetic fields below Hc1 as a function of temperature, from 2 K to the transition temperature and the angle between the field and a fixed direction in the a-b plane. When the superconducting order parameter has nodes on the Fermi surface, such as the case of the spin-singlet dx2−y2 order parameter, nonlinear effects associated with low-energy quasiparticles should become important.1 It was pointed out by Yip and Sauls that these effects will be most important at low temperatures. They should be observable in a measurement of the anisotropy of the magnetization or the magnetic torque. The magnetization is predicted to develop an anisotropic component transverse to the applied field. Anisotropic transverse magnetization with dx2−y2 symmetry is not seen in the temperature regime 5 to 25 K. Our results set stringent limits on the anisotropy of the transverse magnetization in this range. Within the resolution of our experiment no evidence for d-wave pairing is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355396
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  • 3
    Electronic Resource
    Electronic Resource
    A plasma arc reactor for fullerene research (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3820-3822 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified Krätschmer–Huffman reactor for the mass production of fullerenes is presented. Fullerene mass production is fundamental for the synthesis of higher and endohedral fullerenes. The reactor employs mechanisms for continuous graphite-rod feeding and in situ slag removal. Soot collects into a Soxhlet extraction thimble which serves as a fore-line vacuum pump filter, thereby easing fullerene separation from soot. Thermal gravimetric analysis (TGA) for yield determination is reported. This TGA method is faster and uses smaller samples than Soxhlet extraction methods which rely on aromatic solvents. Production of 10 g of soot per hour is readily achieved utilizing this reactor. Fullerene yields of 20% are attained routinely. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145171
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  • 4
    Electronic Resource
    Electronic Resource
    Growth-induced surface state in hydrogenated and fluorinated amorphous silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2346-2355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady-state density of surface states during the deposition of hydrogenated and fluorinated amorphous silicon (a-Si:H,F) can be adjusted via the deposition parameters, particularly the growth pressure. The density of surface states can be frozen in if the sample is cooled immediately after the termination of growth. We have measured frozen in densities of surface states between 1.5×1012 cm−2 and 4×1014 cm−2. a-Si:H,F grown at high density of surface states exhibits a small Urbach energy and a low bulk defect density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348717
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  • 5
    Electronic Resource
    Electronic Resource
    Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2942-2950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed study of the effects of ion bombardment on the optoelectronic properties of a-Si:H films. Two series of samples were deposited from a rf glow discharge at 30 and 100 mTorr of silane pressure, corresponding to two different deposition conditions. The energy of the ions impinging on the substrate was increased by applying a negative dc bias in steps of 25 V to the substrate holder. The increase of the substrate bias from 0 to −100 V had no effect on the deposition rate of a-Si:H at 30 mTorr, whereas a factor of 2 decrease was observed for deposition at 100 mTorr. The density of states of the a-Si:H films, determined by photothermal deflection spectroscopy and by the constant-photocurrent method, decreased as the substrate bias was increased up to −50 V, especially for the series deposited at 100 mTorr. At the same time the valence-band tail became sharper. These observations are consistent with the improvement of the electron drift-mobility deep-trapping-lifetime (μdτd)e product, determined by time-of-flight, and of the hole-mobility recombination-lifetime (μτr)h product determined from the voltage dependence of the photocurrent collection efficiency. For both series of samples, the films with the best electronic properties were obtained at a negative substrate bias of 50 V. No correlation was found between the substrate bias and the light-induced degradation behavior of these films. The saturated density of light-induced defects shows a direct correlation with the optical gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348605
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  • 6
    Electronic Resource
    Electronic Resource
    Strong low-field Hc2 anisotropy in Tl2Ba2Ca2Cu3Ox (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5049-5051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-field dc magnetization measurements in fields between 0.5 and 40 G are reported on a single crystal of nominal composition Tl2Ba2Ca2Cu3O10. It is observed that Hc2, determined from the diamagnetic onset temperature, is quite anisotropic. Extrapolating Hc2 to zero field yields zero field superconductive transition temperatures of Tc=118 K for H parallel to the c axis and Tc=111 K for H perpendicular to the c axis. This apparent inconsistency is thought to be due to the variation in stacking sequence of the Cu-O sheets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344693
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic order of Dy in DyBa2Cu3O7 : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5751-5753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction has been used to study the magnetic fluctuations and long range order of the Dy ions in single crystals of superconducting DyBa2Cu3O7. The temperature dependence of the rod of scattering, characteristic of 2D behavior, has been measured above and below the 3D Néel temperature (TN (approximately-equal-to) 0.9 K). This rod intensity is observed to increase as the temperature decreases until TN is reached, and then the intensity decreases rapidly below TN. The 2D magnetic correlation length, which is obtained from measurements of the width of the rod, grows continuously with decreasing temperature, then reaches a resolution-limited maximum at the Néel temperature when long range magnetic order sets in. At low T, two separate types of simple 3D antiferromagnetic structures are found, one characterized by a wave vector of (1/2 1/2 0), and the other by (1/2 1/2 1/2). We believe the two types of order occur because the (dipolar) energies for these two configurations are nearly identical. This behavior is analogous to the 2D and 3D magnetic order of Er observed in ErBa2Cu3O7.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350149
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  • 8
    Electronic Resource
    Electronic Resource
    Two-dimensional magnetic order of Er in ErBa2Cu3O7 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4533-4535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction has been used to study the magnetic order of the Er ions in superconducting ErBa2Cu3O7. Above the three-dimensional (3D) Néel temperature (TN=0.618 K) a rod of scattering characteristic of two-dimensional (2D) behavior is unambiguously observed, showing that the magnetic interactions of the rare earth ions are highly anisotropic, while there are no significant correlations observed between the sheets of Er spins. The system orders two dimensionally, and as a necessary consequence 3D order also sets in at the same temperature. The order parameter is found to obey the exact Onsager solution for a S= (1)/(2) , 2D Ising antiferromagnet. At low T, two separate types of simple 3D antiferromagnetic structures are found, one characterized by a wave vector of ( (1)/(2) , 0,0), and the other by ( (1)/(2) ,0, (1)/(2) ).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346072
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  • 9
    Electronic Resource
    Electronic Resource
    Low-field characterization of YBa2Cu3O7−δ single crystals (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4170-4172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-field magnetization measurements in flelds from 0 to 100 G at temperatures from 4.2 to 100 K on single crystals of YBa2 Cu3 O7−δ are presented. The crystals have sharp inductive transitions at 91.5 K, occasionally with additional structure suggesting a second phase with a lower Tc . For all crystals in all directions the Meissner effect is a small fraction of the shielding effect. Low-field measurements of Hc2 within 1 K of Tc show a linear temperature dependence with a slope of 80 G/K, much smaller than observed at higher field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340531
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  • 10
    Electronic Resource
    Electronic Resource
    Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1440-1442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm−3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103364
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