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  • 1
    Online-Ressource
    Online-Ressource
    Singapore :Springer Nature Singapore :
    Schlagwort(e): Food science. ; Food Analysis. ; Food Sensory evaluation. ; Food Safety measures. ; Food Science. ; Food Analysis. ; Sensory Evaluation. ; Food Engineering. ; Food Safety.
    Beschreibung / Inhaltsverzeichnis: Chapter 1 Introduction. -Chapter 2 Computer Vision Technologies in Food -- Chapter 3 Near Infrared Spectroscopy Analysis in Food -- Chapter 4 Spectral Imaging Technologies in Food -- Chapter 5 CSAs Array Technologies in Food -- Chapter 6 Acoustic and Vibrating Signal Analysis Technologies in Food -- Chapter 7 Bionic Sensors Technologies in Food -- Chapter 8 Multi-Sensors data fusion Technologies in Food External and Internal Quality Comprehensive Evaluation -- Chapter 9 Intelligent and Portable Equipments of Nondestructve Detection Technologies in Food -- Chapter 10 Nondestructive Deatection Technologies for Real-time Monitoring Food Processing.
    Kurzfassung: This book comprehensively introduces non-destructive methods for food quality (i.e. external, internal, sensory, components, and microbiological indicators) detection, through optics, acoustics, chemistry, imaging, and bionic sensing. It highlights in-situ detection of food quality and safety, including principles, signal processing, and analysis of data, non-destructive detection system, and application in the food industry for each method. First, this book introduces the principles and characteristics of various food non-destructive methods. As non-destructive measurements always involve obtaining big data for each testing, this book also describes in detail the signal and big data processing for each non-destructive method. The chapters also introduce the rapid portable detection equipment for food and agricultural products developed in recent years, as well as the intelligent monitoring equipment in the process of food processing. Relevant application cases are provided to help readers better understanding how to apply non-destructive technology for food quality detection. In the noninvasive measurement of food quality, this book has a systematic introduction of the detection principle, data processing, and rapid detection system, in-field detection case studies. This book is novel and practical and can be used as a professional textbook for undergraduates majoring in food science and engineering. It can also be used as a reference book for scientific research and technical personnel engaged in the field of food quality and safety detection. .
    Materialart: Online-Ressource
    Seiten: XIV, 333 p. 197 illus., 130 illus. in color. , online resource.
    Ausgabe: 1st ed. 2021.
    ISBN: 9789811633607
    DDC: 641.3
    Sprache: Englisch
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5095-5100 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This paper reports a current transport study on the P+/N AlxGa1−xAs homojunction diodes with the AlAs mole fraction, x, ranging from 0 to 0.66. From the 2-kT surface recombination current behavior, the surface state density is nearly independent of x as x is smaller than 0.2. On the other hand, as x is larger than 0.2, the surface state density decreases as x increases. A photocurrent-aided method is proposed to extract the embedded 1-kT current out of the series resistance effect. It is found that the 1-kT current follows Shockley diffusion theory, and the hole diffusion length has a drastic change in the transition region from direct to indirect band. A three-band diffusion model considering the Γ-band-electron-concentration-dependent hole lifetime has been proposed to explain the experimental results successfully.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2140-2145 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Al0.05Ga0.95As/Al0.35Ga0.65As single- and multiple-quantum-well structures with well widths less than 20 A(ring) have been successfully fabricated by liquid-phase epitaxy using low-temperature, two-phase, and dummy wafer methods. The transmission electron microscope cross-section technique is applied to study the thickness variation of quantum well and the transition width at the heterojunction interface. An interesting phenomenon observed during liquid-phase epitaxy growth is that the interface of Al0.05Ga0.95As grown on Al0.35Ga0.65As is rather flat and sharp whereas the opposite growth sequence gives rise to a wavy interface. It is believed that the flat Al0.05Ga0.95As/Al0.35Ga0.65As interface is due to a tendency to deposit the epilayer when the Al0.05Ga0.95As solution is in contact with the Al0.35Ga0.65As substrate and the wavy Al0.35Ga0.65As/ Al0.05Ga0.95As interface is due to a tendency to dissolve the substrate when the Al0.35Ga0.65As solution is in contact with the Al0.05Ga0.95As substrate. The transition width is less than 10 A(ring) at the Al0.05Ga0.95As/Al0.35Ga0.65As interface but is about 30–50 A(ring) at the inverted Al0.35Ga0.65As/ Al0.06Ga0.95As interface. These values are about the same as those reported in the recent literature. The peak energy of the photoluminescence spectrum reveals the quantum size effect.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2767-2772 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The well-known abnormal outdiffusion problem of heavily Be-doped GaAs prepared by molecular-beam epitaxy was found to be initiated by the shrinkage of the lattice constant of the (p+) GaAs epilayer. Through detailed investigation of the double-crystal x-ray spectra, van der Pauw measurements, photoluminescence, and infrared-absorption spectra of Be-doped GaAs for various doping concentrations, it is found that there exists a critical doping concentration, i.e., 2.6×1019/cm3, beyond which the lattice constant of the epilayer starts to shrink and the Be outdiffusion into the substrate is significantly enhanced. Apparently, the tensile stress on the epilayer results in the abnormal Be outdiffusion. The absorption coefficient of Be-doped GaAs in the 8–10 μm region with carrier concentration 8.3×1019/cm3 are found to be about 104 cm−1 which is useful for the application of this layer to a p+-type AlGaAs/GaAs heterojunction infrared detector.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1766-1771 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The 2-kT current at the emitter-base heterojunction of AlGaAs/GaAs heterojunction bipolar transistor grown by liquid phase epitaxy is found to be much lower than that of a GaAs homojunction diode. By measuring spectral response and current-voltage characteristics of (n)AlxGa1−xAs-(p)Al0.05Ga0.95As diodes having a similar structure to the emitter-base heterojunction, it is found that the 2-kT surface recombination current is determined by the lower doped side of the heterojunction. Therefore, a higher 1- to 2-kT current ratio and thus higher current gain can be obtained when a high-band-gap emitter with lower doping concentration is used. It is also found that by inserting an undoped AlGaAs spacer layer in between the emitter-base heterojunction and applying an edge-thinning design, a high-gain heterojunction bipolar transistor can be routinely obtained.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6230-6235 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical and structural properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum-well (MQW) structures grown by gas source molecular-beam epitaxy are investigated by photoluminescence (PL), double crystal x-ray diffraction, and photoconductivity spectroscopies. Properties of the as-grown and annealed MQW's are studied and those of the InAs/InGaAsP MQW (C821) and the InAsN/InGaAsP MQW with the lowest nitrogen contents N=1.1% in the well (C822) are compared. For the C821 InAs/InGaAsP MQW with a very large total strain, a low energy shoulder, possibly induced by defects or impurities, can be seen in the low temperature PL spectrum, and a large density of nonradiative recombination centers is found. For nitrogen-containing MQW's, the PL full width at half maximum and PL peak evolutions with increasing annealing temperature are influenced by the alloy inhomogeneities. The initial redshift of the PL peak after rapid thermal annealing means that the luminescence is dominated by As-rich regions in these as-grown samples. Exciton localization induced by alloy disorders is also found in high-nitrogen-content samples. By comparing the experimental results of C821 and C822, adding a little nitrogen to reduce the rather large total strain in the structure is beneficial to structural and optical quality improvement. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1634-1636 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The silicon doping of GaAs grown by metalorganic chemical vapor deposition using a silane source has been investigated. The amphoteric property of the Si dopant is demonstrated for the first time. It is found that the doping characteristics are strongly temperature dependent. At the growth temperature higher than 600 °C and the arsine to trimethylgallium mole ratio (AsH3/TMG) around 217, the conduction is n type and the carrier concentration increases as the temperature increases. On the other hand, when the growth temperature is lower than 600 °C, the carrier concentration increases as the temperature decreases and the conduction becomes p type at 400–450 °C. In addition, when the AsH3/TMG mole ratio is below 50, the Si-doped GaAs layers also become p type. The GaAs light-emitting diode is thus successfully fabricated using a single silicon dopant.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3061-3064 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Self-organized InAs quantum dots (QDs) grown on both (100) exact and (100) misoriented 7° toward (110) GaAs substrates using gas source molecular beam epitaxy with V/III ratio ranging from 1.1 to 20 have been studied by photoluminescence (PL) measurements from 8.5 to 300 K. The QD structures grown on the misoriented substrates show a better uniformity than those grown on the exact substrates at the same growth conditions. Effects of AsH3 flow rate on the PL intensity, peak energy, and linewidth for QDs grown on both types of substrates are presented. Basically, higher AsH3 flow rate gives higher PL intensity at 8.5 K. At room temperature (300 K), on the contrary, lower AsH3 flow rate results in higher PL intensity. The study of thermal quenching energy reveals that the larger the dot size the better the PL intensity at 300 K. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4006-4009 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As quantum well structure with a 70-A(ring)-thick well has been successfully fabricated by liquid-phase epitaxy at 685 °C. The transmission electron microscope cross-section technique is applied to study the uniformity of the quantum well and the transition width at the heterojunction interface. An interesting phenomenon observed for the first time during liquid-phase epitaxy growth is that the interface of Al0.05Ga0.95As grown on Al0.35Ga0.65As is rather flat and sharp whereas the opposite growth sequence gives rise to a wavy interface. The transition width is less than 10 A(ring) at the Al0.05Ga0.95As/Al0.35Ga0.65As interface but is about 30–50 A(ring) at the inverted Al0.35Ga0.65As/Al0.05Ga0.95As interface. These values are much less than those reported in the literature. The peak energy of the photoluminescence spectrum reveals the quantum size effect.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3976-3979 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Two device structures are presented for the solution of two problems that result when an AlGaAs heterojunction bipolar transistor is used in GaAs integrated circuits. The first is the 2-kT surface recombination current problem, which seriously reduces the current gain, especially at low current level. It is found that by sandwiching a high band-gap p-type AlGaAs in the emitter-base junction interface, the 2-kT current could be substantially reduced, and the current gain displays flattened characteristics at low collector current (〈1 μA). The second problem is how to reliably smooth out the potential spike at the base-collector interface which results in a serious voltage-dependent collector current in the common emitter I-V characteristics of the transistors. It is found that by adding a thin spacer layer with the same composition but the opposite type as the base layer in the base-collector junction interface, the potential spike can be easily and reproducibly suppressed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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