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  • 1
    Electronic Resource
    Electronic Resource
    Mass spectrometric characterization of BCl3/SF6 plasmas (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4507-4509 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant increases in the etch rates of both GaAs and GaN have been observed with the addition of SF6 to BCl3 plasmas. Mass spectrometric characterization of neutrals in these gas mixtures shows that increasing the SF6 percentage in the flow enhances the dissociation of BCl3, resulting in nearly 100% dissociation at 70% SF6. This increased dissociation is believed to be due to electron attachment heating. Both Cl and Cl2 mass intensities also maximize at 70% SF6. The detection of BClF and BCl2F suggest the possibility of reactions occurring between BCl and BCl2 radicals and fluorine, which may inhibit the recombination of Cl. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1309036
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  • 2
    Electronic Resource
    Electronic Resource
    Grain boundary diffusion effects on the sputter depth profiles of Co–Ag bilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3534-3540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effects of surface roughness and grain boundary diffusion (GBD) at elevated temperatures on the Auger-electron-spectroscopy sputter depth profiles of Co–Ag bilayers and the GBD process of Ag atoms in Co. The Ag layer in the Ag/Co bilayer is transformed from a uniform layer to discrete islands by heat treatment. Enhanced mobility during sputtering at elevated temperatures makes Ag atoms migrate continually from islands to cover neighboring exposed Co, which reduces the size of Ag islands. On the other hand, the surface morphological modification of Co/Ag bilayer does not occur by heat treatment, and the depth profile at 340 °C resembles that from a uniformly intermixed film, which shows a drastic difference from that of Ag/Co. This is explained with a very thin and stable accumulation of Ag on the Co layer by GBD. A model of structural changes in Co/Ag subjected to ion sputtering at elevated temperatures is proposed on the basis of the results. The activation energy and pre-exponential factor for GBD of Ag in Co are found to be 0.46±0.06 eV and ∼1×10−8 cm2/s, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361405
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  • 3
    Electronic Resource
    Electronic Resource
    Properties of plasma-enhanced chemical-vapor-deposited a-SiNx:H by various dilution gases (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3645-3655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of dilution gases on hydrogenated amorphous silicon nitride (a-SiNx:H) films were investigated. Silane and ammonia were used as the reactive species, while nitrogen, helium, hydrogen, and argon were used as the dilution gases in a plasma-enhanced chemical vapor-deposition system at a substrate temperature of 300 °C. The electrical, physical, and chemical properties of the a-SiNx:H films were found to be highly sensitive to the various kinds and flow rates of the carrier gases in the deposition. Additionally, the physical properties of growth rate, refractive index, and etching rate were also investigated. The hydrogen bonding configuration was explored by infrared spectroscopy. The total hydrogen concentrations for all a-SiNx:H films were observed to be smaller than 3.0×1022 cm−3. The electrical properties were characterized by I-V and C-V measurements in metal-insulator-semiconductor structures. The breakdown strength was determined at the current density of 3 mA/cm2; in addition, the dominant mode of electronic conduction would appear to be the Poole–Frenkel emission. The interface trap state density Dit which ranged from 3.4×1011 to 1.3×1012 cm−2 eV−1 was evaluated by the C-V characteristics. Finally, the influences of the gas dilution in the a-SiNx:H films, as applied to the devices, were investigated by using the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). Analyses of the transfer characteristics of the TFT devices revealed that the density of deep gap states is 4×1012 cm−2 eV−1 and the field-effect mobility μFE is changing from 0.37 to 1.45 cm2/V s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357428
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  • 4
    Electronic Resource
    Electronic Resource
    Adhesion enhancement of ion beam mixed Cu/Al/polyimide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 135-138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu (400 Å)/polyimide was mixed with 80 keV Ar+ and N2+ from 1.0×1015 to 2.0×1016 ions/cm2. The same processes were repeated for the Cu (400 Å)/Al (50 Å)/polyimide system which has Al as a buffer layer. The quantitative adhesion strength was measured by a standard scratch test. X-ray photoelectron spectroscopy was employed to investigate the change in the chemical bonds of the ion beam mixed polyimide substrate and the intermediate effects for the adhesion enhancement in Cu/Al/polyimide. Two distinct tendencies are observed in the adhesion strength: Cu/Al/polyimide is more adhesive than Cu/polyimide after ion beam mixing, and N2+ ions are more effective in the adhesion enhancement than Ar+. The formation of an interlayer compound of CuAl2O4 accounts for the former, while the latter is understood by the fact that N2+ ions produce more pyridinelike moiety, amide group and tertiary amine moiety which are known as adhesion promoters. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363999
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  • 5
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of benzimidazobenzophenanthroline type ladder polymers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 712-714 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Third-order optical susceptibilities (χ(3)) of poly{(7-oxo-7, 10H-benz[de]imidazo[4',5':5,6]benzimidazo [2,1-a]isoquinoline-3,4:10,11-tetrayl)-carbonyl}, referred to as BBL, and poly(6,9-dihydro-6,9-dioxobisbenzimidazo[2,1b:1',2'j] benzo[1mn]-[3,8]phenanthroline-3,12-diyl), known as BBB, have been determined using the technique of degenerate four-wave mixing (DFWM) at 1.064 μm. BBL has a χ(3)xxxx=(1.5±0.4)×10−11 esu, three times as large as that of BBB and 38 times as large as that of CS2. Electrochemical doping led to a small (〈30%) increase in the third-order susceptibility of BBL.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102689
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  • 6
    Electronic Resource
    Electronic Resource
    High-barrier height metal-insulator-semiconductor diodes on n-InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4051-4056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-insulator-semiconductor diodes were fabricated using Pd, Ni, and Au contacts on n-InP covered by a 40-A(ring) chemically grown oxide. The oxide had a refractive index of 1.4–1.6 with a composition of mainly In2O3+some InPO3 near the surface and mixed oxide+InP near the interface. Pd devices gave the highest-barrier height of 0.80 eV and the lowest reverse saturation current density of 3×10−8 A/cm2. Current-voltage-temperature and capacitance-voltage-temperature data gave temperature dependence of barrier height and revealed an interface state recombination current mechanism with surface states 0.4 eV above the valence-band level. Richardson plots gave good straight lines when empirically corrected using barrier height divided by ideality factor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343331
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  • 7
    Electronic Resource
    Electronic Resource
    Large-signal coherent control of normal modes in quantum-well semiconductor microcavity (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3941-3943 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate coherent control of the cavity-polariton modes of a quantum-well semiconductor microcavity in a two-color scheme. The cavity enhancement of the excitonic nonlinearity gives rise to a large signal; modulating the relative phase of the excitation pulses between zero and π produces a differential reflectivity (ΔR/R) of up to 20%. The maximum nonlinear signal is obtained for cocircular pump and probe polarization. Excitation-induced dephasing is responsible for the incoherent nonlinear response, and limits the contrast ratio of the optical switching. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378316
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  • 8
    Electronic Resource
    Electronic Resource
    Domain mapping of periodically poled lithium niobate via terahertz wave form analysis (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2488-2490 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a nondestructive probing technique to investigate the inner crystal domain structure of ferroelectric crystals by analyzing the terahertz wave forms generated by optical rectification. Quantitative analysis of the domain structure has been performed for the domain width in periodically poled lithium niobate. Simulation results show that the terahertz wave form analysis reproduces root-mean-square domain width fluctuations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318725
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  • 9
    Electronic Resource
    Electronic Resource
    Generation of narrow-band terahertz radiation via optical rectification of femtosecond pulses in periodically poled lithium niobate (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2505-2507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a promising technique for generating narrow-band terahertz electromagnetic radiation. Femtosecond optical pulses are propagated through a periodically poled lithium-niobate crystal, where the domain length is matched to the walk-off length between the optical and THz pulses. The bandwidth of the THz wave forms is 0.11 at 1.7 THz. Optical rectification gives rise to a THz wave form which corresponds to the domain structure of the periodically poled lithium niobate. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126390
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  • 10
    Electronic Resource
    Electronic Resource
    Tunable narrow-band terahertz generation from periodically poled lithium niobate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3583-3585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a technique for generating tunable narrow-band terahertz radiation via optical rectification in periodically-poled lithium niobate. Frequency tuning is accomplished by spatially chirping the domain width laterally to the beam propagation direction, and adjusting the temperature of the sample. We demonstrate tuning over a continuous range from 0.8 to 2.5 THz. The bandwidth of the terahertz waveforms is as narrow as 0.02 THz. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1373406
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