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  • 1
    Electronic Resource
    Electronic Resource
    Thermally stable ternary titanium-tantalum silicide formation on polycrystalline silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1456-1458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A material for thermally stable self-aligned silicide technologies has been developed using sequentially deposited Ti/Ta on polycrystalline silicon. At lower annealing temperatures below 1000 °C two separate phases were found by cross-sectional transmission electron microscopy to exist in the form of bilayer TiSi2/TaSi2. The formation of a ternary phase (TiTa)Si2 has been observed at a higher temperature of 1000 °C. Consequently, the ternary (TiTa)Si2 layer could be kept extremely flat, with a sheet resistance of 5 Ω/(D'Alembertian), even after 1000 °C, 30 min annealing. Cross-sectional transmission electron micrographs of the structure clearly reveal that no agglomeration occurs during the heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354861
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of BF2+ implants on titanium silicide formation by rapid thermal annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 297-299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of titanium silicides on Si implanted with different BF2+ dosages has been studied by secondary ion mass spectrometry and transmission electron microscopy measurements. The thickness of the silicide layer formed in the temperature ranging from 600 to 800 °C has been investigated as a function of the implanted BF2+ dosage up to 1×1016 cm−2. Annealing at 700 °C results in conversion of the titanium film into predominantly C49 TiSi2, and most of it is transformed into the C54 phase at 800 °C or higher, resulting in a lower sheet resistance (16 μΩ cm). The titanium silicide thickness formed after the rapid thermal annealing (RTA) treatment depends on the implanted BF2+ dosage, caused by the native oxide enhanced by increased damage. Boron is redistributed into the silicide layer up to the solid solubility limit during annealing, leading to an accumulation at the silicide/silicon interface. The lowest contact resistance (with a size of 0.7 μm×0.7 μm) of 35 Ω is obtained at the annealing temperature of 700 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352136
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  • 3
    Electronic Resource
    Electronic Resource
    Simple function for a complex domain configuration : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5752-5754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A complex domain configuration found in an iron whisker can be generated by a function with three parameters. The configuration is generated by passing a current along the axis of a {100} whisker with a square cross section. It has four domains in which the magnetization circulates about a central domain magnetized along the z axis. There are four {110} 90° walls and four {100} 90° walls separating these domains. Two of the parameters are known a priori from micromagnetics: a1 describes type I 90° walls between two domains with in-plane magnetization; and a2 describes type II 90° walls between the domains with in-plane magnetization and the central domain with the magnetization out of the plane. The third parameter h, which determines the width of the central domain, is adjustable to minimize the total micromagnetic energy in response to magnetic fields. The magnetization pattern is generated from a vector potential A(x,y)zˆ. Calculating Ms curl A(x,y)zˆ produces Mx and My. Then Mz is found from M2x+M2y+M2z=M2s. The potential has four parts: A(x,y)=Ax+Az+Ah+Ac, where Ax and Ay are the same function (with x and y interchanged) used to create the in-plane domains and the type I walls, Ah generates the type II walls, and Ac describes the outer corners. The resulting magnetization is divergence free. The analytic functions are convenient for calculation of the magnetic response to applied fields. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362176
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  • 4
    Electronic Resource
    Electronic Resource
    Tunable bistability from magnetostriction (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7031-7031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When a current passes along the axis of a [100] iron whisker in the presence of a field along the same axis, the magnetization in a central domain points along the field direction while the mangetization in four domains surrounding the central domain circulates about the axis, see Fig. 1. The size of the central domain grows with applied field, which overcomes the effect of the field from the current and the magnetostriction that favor the collapse of the central domain to an irreducible core. Depending on the current, the growth of the central domain can be a continuous or discontinuous process. At certain fields the energy is a double-well function of the size of the central domain, which determines the magnetization. The size of the energy barrier can be made arbitrarily small by suitable choice of the current. It is the ability to adjust the size of the barrier in such a clearly defined system that makes this an attractive experimental approach to understanding the role of fluctuations in magnetization processes. This structure has been verified using measurements of ac susceptibility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358078
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  • 5
    Electronic Resource
    Electronic Resource
    Iron whisker domain patterns imaged by garnet films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6051-6053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bismuth doped yttrium iron garnet thin films formed on the surfaces of a gadolinium gallium garnet substrate are used as magneto-optical indicators for quantitative studies of the micromagnetics of an iron whisker. The method does not require image processing. A field applied perpendicular to the whisker axis splits a 180° domain wall into two 90° sections slightly separated by a section magnetized in the direction of the perpendicular field. A field along the axis of the whisker has a similar effect. Where the region between the two split 90° sections intersect the surface, there is a magnetic charge that strongly affects the domain pattern of the indicator film. More generally, domain walls become visible because the local internal susceptibility is greater at the walls than in the domains. The magneto-optical indicator can be used to measure both susceptibilities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362088
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetization in current carrying iron whiskers (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5713-5713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure deduced for a 〈100 〉 iron whisker carrying a current along its axis in the presence of a magnetic field is shown in Fig. 1. An analytic model of the ac response is obtained by considering the competition of exchange, anisotropy and magnetostatic energies. For the analytic model the magnetization is assumed to point either along an easy axis in the plane or out of the plane everywhere except in the walls where the energies of the walls per unit area are assumed to be independent of field. It is argued that the energy scales with that of the central cross section subjected to demagnetizing fields that depend on the magnetization along the axis in that cross section. The model is shown to account for the ac susceptibility of a current carrying whisker. The calculation is refined by considering a pattern that is divergenceless. The pattern is generated by taking the curl of a vector potential to produce the components in the plane and adding a component perpendicular to the plane to conserve the magnitude. The vector potential has a single component given by Az = Msq cothB/q[(1/(square root of)2) (q/{a ln [cosh(x/a)cosh (y/a)] })q/B − Ac[(x/a), (y/a)], where the parameter q determines the size of the central region of Fig. 1, the constant a sets the scale for the 90° domain walls between the four outer domains, and B sets the scale for the 90° domain wall between the central region and the outer domains. The term Ac is added to turn the magnetization along the axis of the whisker in each corner of the central cross section. The only parameter in Ac is a. The total energy is minimized for parameters q, B, and a. The field dependence of q accounts for the magnetic behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355592
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  • 7
    Electronic Resource
    Electronic Resource
    Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using metalorganic chemical vapor deposition assisted by a nitrogen radical irradiation generated by rf plasma, we have enhanced the quality and the step coverage of titanium nitride barrier metals for the contact holes with a high aspect ratio and a submicron radius. Electrical resistivity measurements show that the film resistivity improves by a factor of five as the proper nitrogen irradiation has been applied. The step coverage in a contact hole with 0.4 μm diam and 3:1 aspect ratio has been improved from 50% to 80% by applying nitrogen plasma, clearly demonstrating the effectiveness of this technique in the conformal deposition of barrier metals for the ultra-large scale integration. The incident nitrogen radical is believed to play several roles, such as the enhancement of surface migration rate of molecules and the reduction of the amount of hydrocarbon incorporating into the film during the deposition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116190
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy studies of titanium nitride/titanium/silicon structures after thermal annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 579-581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen diffusion/incorporation behaviors of TiN/Ti/Si structures after thermal annealing in nitrogen ambients have been studied by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy measurements. At the interface between Ti and TiN, titanium dioxides, thermodynamically most stable, are formed as a consequence of grain boundary diffusion, while inside TiN layer the contents of TiO and Ti2O3 compounds increases as the annealing temperature increases. At the interface between Ti and Si, titanium silicide formation is observed in the samples annealed above 450 °C consuming a part of pure Ti layer. One thing to note is that a severe blistering is observed in a sample annealed at 600 °C, probably caused by the difference of thermal expansion coefficients between TiSi2 and TiO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108861
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  • 9
    Electronic Resource
    Electronic Resource
    A self-passivated Cu(Mg) gate electrode for an amorphous silicon thin-film transistor (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3962-3964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of using Cu(Mg) alloy film as a gate electrode for thin-film transistor (TFT) liquid crystal displays has been investigated. When pure Cu was used as a gate electrode, severe interdiffusion occurred between Cu and the gases SiH4, NH3, and CF4 during plasma-enhanced chemical vapor deposition of a gate dielectric, SiNx, and dry etching of the SiNx. On the other hand, the deposition of a Cu(Mg) alloy film gives rise to the formation of a MgO/Cu bilayer structure with low Cu resistivity, good adhesion to SiO2, higher leakage current density, and excellent passivation capability. A hydrogenated amorphous silicon TFT with a MgO encapsulated Cu gate exhibited a gate voltage swing of 0.91 V/dec. and a threshold voltage of 6.8 V, resulting in a reduction of process steps and better performance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424062
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  • 10
    Electronic Resource
    Electronic Resource
    Diffusion barrier and electrical characteristics of a self-aligned MgO layer obtained from a Cu(Mg) alloy film (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2192-2194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion barrier characteristics and electrical properties of self-aligned MgO layers obtained from a Cu(Mg) alloy film have been investigated. Self-aligned surface and interfacial MgO layers were formed upon annealing a Cu(Mg) film in an oxygen ambient and prevented interdiffusion of Cu in SiO2 up to 700 °C. The thermal stability of a pure Cu/TiN/Si multilayer system has been significantly enhanced up to 800 °C by the MgO layers by forming a MgO/Cu/MgO/TiN/Si multilayer system. A combined structure of Si3N4(500 Å)/MgO(100 Å) increased the breakdown voltage up to 20 V from 15 V and reduced the leakage current density down to 3×10−9 A/cm2 from 1×10−8 A/cm2 compared to a pure copper system. Consequently, the deposition of Cu(Mg) alloy followed by annealing in an oxygen ambient gives rise to the formation of a self-aligned MgO layer with excellent diffusion barrier and electrical characteristics and the film can be applied as a gate electrode in thin-film transistor/liquid-crystal displays, resulting in a reduction of process steps. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314879
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