Publication Date:
2013-03-09
Description:
Author(s): Lin-Lin Wang, Mianliang Huang, Srinivasa Thimmaiah, Aftab Alam, Sergey L. Bud'ko, Adam Kaminski, Thomas A. Lograsso, Paul Canfield, and Duane D. Johnson Formation energies of native defects in Bi 2 (Te x Se 3− x ), with comparison to ideal Bi 2 Te 2 S, are calculated in density-functional theory to assess transport properties. Bi 2 Se 3 is found to be n type for both Bi- and Se-rich growth conditions, while Bi 2 Te 3 changes from n to p type going from Te- to Bi-ric... [Phys. Rev. B 87, 125303] Published Fri Mar 08, 2013
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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