Publikationsdatum:
2015-01-22
Beschreibung:
Ta-layer thickness ( t Ta ) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE 011 resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t Ta . For t Ta ≈ λ Ta (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V ISH between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle θ SH (from 10% to 40%). However, when t Ta ≫ λ Ta , the V ISH values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained θ SH within 4% deviation. The results will provide an outline for an accurate estimation of the θ SH for materials with small λ value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current.
Print ISSN:
0003-6951
Digitale ISSN:
1077-3118
Thema:
Physik
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