ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract An overgrowth InSb epilayer on GaAs substrate with large lattice-mismatch was grown by metalorganic chemical vapor deposition (MOCVD), and the heterogeneous crystalline state was observed by scanning electron acoustic microscopy (SEAM). The middle stage of relaxation of the large mismatch InSb/GaAs epilayer is observed by SEAM images of crystalline state of the buried subsurfaces. A macroscopical heterogeneous distribution is formed by large compression stress fields. It was a very important result to observe and study semiconductor epitaxial heterostructures by SEAM uniquely imaging mechanism.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1004640413744
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