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  • 1
    Publication Date: 2016-04-12
    Description: Combining experimental methods and classical molecular dynamics (MD) computer simulations, we explore the martensitic transformation in Fe 70 Pd 30 ferromagnetic shape memory alloy thin films induced by laser shock peening. X-ray diffraction and scanning electron microscope measurements at shock wave pressures of up to 2.5 GPa reveal formation of martensitic variants with preferred orientation of the shorter c -axis of the tetragonal unit cell perpendicular to the surface plane. Moreover, consequential merging of growth islands on the film surface is observed. MD simulations unveil the underlying physics that are characterized by an austenite-martensite transformation with a preferential alignment of the c -axis along the propagation direction of the shock wave, resulting in flattening and in-plane expansion of surface features.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 2
    Publication Date: 2019
    Description: 〈p〉The instructive capabilities of extracellular matrix–inspired materials for osteoprogenitor differentiation have sparked interest in understanding modulation of other cell types within the bone regenerative microenvironment. We previously demonstrated that nanoparticulate mineralized collagen glycosaminoglycan (MC-GAG) scaffolds efficiently induced osteoprogenitor differentiation and bone healing. In this work, we combined adenovirus-mediated delivery of osteoprotegerin (AdOPG), an endogenous anti-osteoclastogenic decoy receptor, in primary human mesenchymal stem cells (hMSCs) with MC-GAG to understand the role of osteoclast inactivation in augmentation of bone regeneration. Simultaneous differentiation of osteoprogenitors on MC-GAG and osteoclast progenitors resulted in bidirectional positive regulation. AdOPG expression did not affect osteogenic differentiation alone. In the presence of both cell types, AdOPG-transduced hMSCs on MC-GAG diminished osteoclast-mediated resorption in direct contact; however, osteoclast-mediated augmentation of osteogenic differentiation was unaffected. Thus, the combination of OPG with MC-GAG may represent a method for uncoupling osteogenic and osteoclastogenic differentiation to augment bone regeneration.〈/p〉
    Electronic ISSN: 2375-2548
    Topics: Natural Sciences in General
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  • 3
    Publication Date: 2014-05-21
    Description: Absorption of a photon by a rhodopsin or cone-opsin pigment isomerizes its 11-cis-retinaldehyde (11-cis-RAL) chromophore to all-trans-retinaldehyde (all-trans-RAL), which dissociates after a brief period of activation. Light sensitivity is restored to the resulting apo-opsin when it recombines with another 11-cis-RAL. Conversion of all-trans-RAL to 11-cis-RAL is carried out by an...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 4
    Publication Date: 2014-06-21
    Description: Seventeen Middle Pleistocene crania from the Sima de los Huesos site (Atapuerca, Spain) are analyzed, including seven new specimens. This sample makes it possible to thoroughly characterize a Middle Pleistocene hominin paleodeme and to address hypotheses about the origin and evolution of the Neandertals. Using a variety of techniques, the hominin-bearing layer could be reassigned to a period around 430,000 years ago. The sample shows a consistent morphological pattern with derived Neandertal features present in the face and anterior vault, many of which are related to the masticatory apparatus. This suggests that facial modification was the first step in the evolution of the Neandertal lineage, pointing to a mosaic pattern of evolution, with different anatomical and functional modules evolving at different rates.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Arsuaga, J L -- Martinez, I -- Arnold, L J -- Aranburu, A -- Gracia-Tellez, A -- Sharp, W D -- Quam, R M -- Falgueres, C -- Pantoja-Perez, A -- Bischoff, J -- Poza-Rey, E -- Pares, J M -- Carretero, J M -- Demuro, M -- Lorenzo, C -- Sala, N -- Martinon-Torres, M -- Garcia, N -- Alcazar de Velasco, A -- Cuenca-Bescos, G -- Gomez-Olivencia, A -- Moreno, D -- Pablos, A -- Shen, C-C -- Rodriguez, L -- Ortega, A I -- Garcia, R -- Bonmati, A -- Bermudez de Castro, J M -- Carbonell, E -- New York, N.Y. -- Science. 2014 Jun 20;344(6190):1358-63. doi: 10.1126/science.1253958.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Centro Mixto UCM-ISCIII de Evolucion y Comportamiento Humanos, Madrid, Spain. Departamento de Paleontologia, Facultad Ciencias Geologicas, Universidad Complutense de Madrid, Spain. jlarsuaga@isciii.es. ; Area de Paleontologia, Departamento de Geologia, Geografia y Medio Ambiente, Universidad de Alcala, Spain.Centro Mixto UCM-ISCIII de Evolucion y Comportamiento Humanos, Madrid, Spain. ; Centro Nacional de Investigacion sobre la Evolucion Humana Burgos, Spain. School of Earth and Environmental Sciences, the Environment Institute, and the Institute for Photonics and Advanced Sensing (IPAS), University of Adelaide, Australia. ; Departamento Mineralogia y Petrologia, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Spain. ; Berkeley Geochronology Center, Berkeley, CA, USA. ; Department of Anthropology, Binghamton University (State University of New York), Binghamton, NY, USA. Division of Anthropology, American Museum of Natural History, New York, NY, USA.Centro Mixto UCM-ISCIII de Evolucion y Comportamiento Humanos, Madrid, Spain. ; Departement de Prehistoire, Museum National d'Histoire Naturelle, Paris, France. ; Centro Mixto UCM-ISCIII de Evolucion y Comportamiento Humanos, Madrid, Spain. Departamento de Paleontologia, Facultad Ciencias Geologicas, Universidad Complutense de Madrid, Spain. ; U.S. Geological Survey, Menlo Park, CA,USA. ; Centro Nacional de Investigacion sobre la Evolucion Humana Burgos, Spain. ; Laboratorio de Evolucion Humana, Departamento de Ciencias Historicas y Geografia, Universidad de Burgos, Spain. ; Centro Nacional de Investigacion sobre la Evolucion Humana Burgos, Spain. Institute for Photonics and Advanced Sensing (IPAS), School of Chemistry and Physics, University of Adelaide, Australia. ; Area de Prehistoria, Departamento d'Historia i Historia de l'Art, Universitat Rovira i Virgili (URV), Tarragona, Spain. Institut Catala de Paleoecologia Humana i Evolucio Social, Tarragona, Spain.Centro Mixto UCM-ISCIII de Evolucion y Comportamiento Humanos, Madrid, Spain. ; Centro Mixto UCM-ISCIII de Evolucion y Comportamiento Humanos, Madrid, Spain. ; Paleontologia, Aragosaurus-IUCA and Facultad Ciencias, Universidad de Zaragoza, Spain. ; Centro Mixto UCM-ISCIII de Evolucion y Comportamiento Humanos, Madrid, Spain. Departement de Prehistoire, Museum National d'Histoire Naturelle, Paris, France. PAVE Research Group, Division of Biological Anthropology, Cambridge, UK. ; Departement de Prehistoire, Museum National d'Histoire Naturelle, Paris, France. Laboratorio de Evolucion Humana, Departamento de Ciencias Historicas y Geografia, Universidad de Burgos, Spain. ; Centro Mixto UCM-ISCIII de Evolucion y Comportamiento Humanos, Madrid, Spain. Centro Nacional de Investigacion sobre la Evolucion Humana Burgos, Spain. Laboratorio de Evolucion Humana, Departamento de Ciencias Historicas y Geografia, Universidad de Burgos, Spain. ; High-Precision Mass Spectrometry and Environment Change Laboratory (HISPEC), Department of Geosciences, National Taiwan University, Taiwan ROC. ; Institut Catala de Paleoecologia Humana i Evolucio Social, Tarragona, Spain. Area de Prehistoria, Departamento d'Historia i Historia de l'Art, Universitat Rovira i Virgili (URV), Tarragona, Spain. Institute of Vertebrate Paleontology and Paleoanthropology of Beijing (IVPP), China.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/24948730" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Brain/anatomy & histology ; Extinction, Biological ; *Fossils ; Genetic Drift ; Humans ; Neanderthals/*anatomy & histology/*genetics ; Organ Size ; Reproductive Isolation ; Skull/*anatomy & histology ; Spain
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 5
    Publication Date: 2017-03-30
    Description: Crystal Growth & Design DOI: 10.1021/acs.cgd.6b01641
    Print ISSN: 1528-7483
    Electronic ISSN: 1528-7505
    Topics: Chemistry and Pharmacology , Geosciences , Physics
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  • 6
    Publication Date: 2017-10-20
    Description: Journal of the American Chemical Society DOI: 10.1021/jacs.7b09541
    Print ISSN: 0002-7863
    Electronic ISSN: 1520-5126
    Topics: Chemistry and Pharmacology
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7412-7415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial molecular beam epitaxy growth of nanometric Ge layers on Si (001) 2×1 has been investigated, in situ, by x-ray Si 2p photoelectron diffraction and Auger Ge LMM electron diffraction which consist essentially in preferential scattering of electrons in the direction of interatomic axes. Particular attention was paid to measuring the contrasts of this anisotropic emission in the (11¯0) plane as a function of deposition parameters. It can thus be determined how crystalline material quality and epitaxial perfection are affected by the residual pressure below 5×10−8 mbar, the substrate temperature decrease to room temperature, the deposition rate, and the Ge overlayer thickness.
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 74 (1952), S. 3378-3381 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2742-2744 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrahigh vacuum compatible electron cyclotron resonance (ECR) plasma source is employed for the first time in studying the surface nitridation with N2 on Si (001)-2×1 at low substrate temperature (Ts=RT). The exposure to the efficiently activated and dissociated nitrogen flux in the microwave plasma is not limited to the silicon surface states but results in the formation of ultrathin dielectric near-stoichiometric Si3N4 layers (∼20 A(ring)) analyzed in situ by x-ray photoelectron spectroscopy (XPS). These films, without hydrogen content and silicon deposit, could easily be grown in few minutes at RT and at relatively low working pressures (∼10−4 mbar in the chamber) without destroying the underlying Si substrate as checked by x-ray photoelectron diffraction (XPD). Composition deviations to the Si3N4 stoichiometry of the grown nitride layers are also discussed in relation with the contamination oxygen content and the contribution of the interface subnitride configurations.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1053-1055 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hut cluster formation during Ge or Si1−xGex solid source molecular beam epitaxial growth on Si(001) is a well-known kinetic pathway for partial strain relief. It results in undulated morphologies with {105} facets allowing a(parallel) lattice parameter relaxation on the island apexes. Here, we show how subsequent Si coverages, grown at 500 °C, avoid being tensile strained and impede further increase of stored elastic strain energy. Dominant inhomogeneous Si surface diffusions take place as proven by a Ge marker technique able to provide transmission electron microscopy or high-resolution transmission electron microscopy images of the initial Si morphology stages and by reflection high-energy electron diffraction examinations. This mechanism prevails for high enough Si growth rates, able to quench lateral Ge diffusion and limit chemical strain relief. Mediated by stress variations on the noncapped island curvatures, Si is depleted from the top of the islands and accumulates in the troughs of the ripples where it accommodates mostly unstrained. By this selective Si coverage, the surface undergoes a rapid smoothing and a(parallel) recovery toward the Si bulk value. When the Ge containing islands are completely buried, their strain, dictated by the Si buffer and cap layers, ends by being mainly along the growth direction or tetragonal (Δa(parallel)=0). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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