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  • 1
    Electronic Resource
    Electronic Resource
    Triply resonant enhancement of third-order nonlinear optical susceptibility in compositionally asymmetric coupled quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The third-order nonlinear optical susceptibility χ(3)(3ω) due to the intersubband transitions in the four-level AlInAs/GaInAs compositionally asymmetric coupled quantum well (CACQW) is investigated theoretically. The subband eigenenergy En of the CACQW structure could be designed to form an equally spaced energy-level ladder. Since the eigenenergy spacing could be designed to resonate with the pumping source, the third-order nonlinear optical susceptibility could be greatly enhanced through the triple resonance. Based on the theoretical calculations, a magnitude of ||χ(3)(3ω)|| as high as 2.2×105 (nm/V)2 can be achieved for the CACQW structure. This is a more than eight orders of magnitude enhancement as compared to that of the bulk value in GaAs. In addition to the design of CACQW structure, the triple resonance can also be achieved by biasing the CACQW under a proper electric field due to the large Stark effect of the CACQW structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357887
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  • 2
    Electronic Resource
    Electronic Resource
    The double resonant enhancement of optical second harmonic susceptibility in the compositionally asymmetric coupled quantum well (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2177-2183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The second harmonic susceptibility due to the intersubband transitions in the three-level GaAs/AlxGa1−xAs/AlyGa1−yAs compositionally asymmetric coupled quantum well (CACQW) under the influence of the applied electric field is investigated theoretically. The subband eigenenergy En of the CACQW structure could be designed to form an equally spaced energy-level ladder. Since the eigenenergy spacing could be designed to resonate with the pumping source, the second harmonic susceptibility could be greatly enhanced through the double resonance. Based on the theoretical calculations, the second harmonic susceptibility as high as 220 nm/V can be achieved for the CACQW. This is a more than three orders of magnitude enhancement as compared to that of the bulk GaAs. In addition to the design of CACQW structure, the double resonance can also be achieved by biasing the CACQW under a proper electric field. The extinguishment of the second order nonlinear optical effect by the applied electric field has also been studied. This phenomenon is attributed to the symmetry restoration of envelope wave functions of the CACQW structures under the quenching electric field Eoff. A simple physical model to estimate the Eoff has also been developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356278
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  • 3
    Electronic Resource
    Electronic Resource
    Strong Stark effect of the intersubband transitions in the three coupled quantum wells: Application to voltage-tunable midinfrared photodetectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2700-2706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum-confined Stark effect in the AlInAs/GaInAs three-coupled-quantum-well (TCQW) structures is studied theoretically. The basic AlInAs/GaInAs TCQW structures are composed of three GaInAs quantum wells separated by two narrow AlInAs barriers. Results indicated that the three-depth TCQW structure exhibits a very large and near-linear voltage-control Stark shift for the energy of the 1→4 intersubband transition (ΔE41). The amount of the Stark shift of calculated intersubband energy separation ΔE41 is about 175 meV as the applied electric field varied from −90 to 90 kV/cm. This large Stark shift can be exploited for fabricating a voltage-tunable midinfrared photodetector operating in λ=3–5 μm atmospheric window region. By employing the enhanced Stark shift of the 1→4 intersubband transition in the three-depth TCQW structure, a highly sensitive voltage-tunable midinfrared photodetector is proposed. The operation of this device is based on the infrared absorption by electrons in the ground-state subband E1 transited to the third-excited-state subband E4 of the TCQW. Since the infrared radiation is absorbed via the intersubband resonance absorption ((h-dash-bar)ω=E4−E1), the detected infrared wavelength can be tuned by the ΔE41 which can be adjusted by an applied electric field. The tunability of this three-depth TCQW structure has been studied theoretically. Based on the theoretical calculations, a tuning range from 3 to 5 μm is predicted for the three-depth TCQW structure by varying the applied electric field in the 90 to −80 kV/cm range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360065
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  • 4
    Electronic Resource
    Electronic Resource
    Very large Stark shift in three-coupled-quantum wells and their application to tunable far-infrared photodetectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3433-3438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum-confined Stark effect in the three-coupled-quantum-well (TCQW) structure is studied theoretically in this paper. The basic TCQW structures are composed of three quantum wells separated by two thin barriers. Coupled one-dimensional Schrödinger and Poisson equations are solved self-consistently to find the sub-band eigenenergies and the envelope wave functions for the TCQW structures. Results indicate that the GaInAs/AlGaAs/GaAs two-depth TCQW structure exhibits both a very large Stark shift and a high absorption coefficient for the 1→3 intersub-band transition. By using a 1→3 intersub-band Stark shift in the two-depth TCQW structure, a highly sensitive tunable far-infrared photodetector is proposed. This photodetector is ideal for device applications in the 8–14 μm atmospheric window region. The operation of this device is based on the infrared absorption by electrons in the ground state transited from the ground-state sub-band E1 of the TCQW to the second-excited-state sub-band E3. A very large variation of eigenenergy spacing ΔE31 between E3 and E1 under an applied electric field can be achieved. Since the infrared radiation is absorbed via the intersub-band resonance absorption ((h-dash-bar)ω=E3−E1), the detected infrared wavelength can be tuned by the ΔE31 which can be adjusted by an applied electric field. Based on the theoretical calculations, a tuning range from 7.4 to 14 μm is predicted for the two-depth TCQW structure. This tuning capability is achieved by varying the applied electric field in the 60 to −60 kV/cm range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358635
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  • 5
    Electronic Resource
    Electronic Resource
    Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 11-16 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 1.3 μm modulator using light-hole–to-electron interband Stark shift in the lattice-matched AlInAs/GaInAs coupled quantum wells (CQWs) is investigated theoretically. The operation of this device is based on the lowest-energy absorption resonance corresponding to the first light-hole–to–electron transition (ELh1→Ee1). The resonant nature of this process results in a sharp absorption peak when the incident photon energy is equal to the energy-level separation. This device utilizes the significant enhancement of the Stark effect on the electronic states and the strong field-dependence transition dipole moments. Under an applied electric field, the energy spacing between ELh1 and Ee1 changes due to the Stark shift. The contrast ratio can be improved from 8:1 for the symmetric CQW to as high as 20:1 for the proposed asymmetric CQW structure. These contrast ratios are achieved by varying the applied electric field in the 0–70 kV/cm range. This large variation of optical absorption at 1.3 μm is obtained both by the enhanced Stark shift and by varying the overlap between the hole and electron envelope wave functions with an applied electric field and Stark effect for the proposed AlInAs/GaInAs CQW system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359377
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  • 6
    Electronic Resource
    Electronic Resource
    The enhancement of optical third harmonic susceptibility in a parabolic quantum well by triple resonance (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3223-3225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The third harmonic susceptibility for the finite parabolic quantum well (PQW) is studied theoretically. An important feature of the finite PQW is that the subband eigenenergies En form an equally spaced energy-level ladder. Since the eigenenergy spacing (h-dash-bar)ω0 can be designed to resonate with the pumping source, the third harmonic susceptibility can be greatly enhanced through the triple resonance. A third harmonic susceptibility as high as 2000 (nm/V)2 could be achieved for the finite parabolic quantum well structure. This is a more than six orders of magnitude enhancement as compared to that of the bulk GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356129
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  • 7
    Electronic Resource
    Electronic Resource
    The enhanced Stark effects of coupled quantum wells and their application to tunable IR photodetectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2598-2604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tunable asymmetric coupled quantum well far-infrared photodetector is proposed in this paper. The basic asymmetric coupled quantum wells are composed of two quantum wells separated by a thin barrier. In this way, the electron in each well interacts strongly with other electrons to achieve a large Stark tuning effect. The eigenenergies and the wave functions of the quantum-well structures are solved by the self-consistent method, and the effect of the exchange interaction on the ground-state subband has also been taken into account. The absorption coefficient is evaluated by the density-of-states formalism. Based on theoretical calculations, tuning ranges from 8.2 to 11.3 μm and 7.8 to 10.5 μm are predicted for the proposed asymmetric coupled-quantum-well structure and high-low coupled-quantum-well structure, respectively. This tuning capability is achieved by varying the applied electric field in the 20–90-kV/cm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355293
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  • 8
    Electronic Resource
    Electronic Resource
    Enhancement of the Stark effect in AlInAs/GaInAs coupled quantum wells and their application to tunable midinfrared photodetectors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3181-3186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tunable midinfrared photodetector using 1→4 intersubband Stark shift in the four-level AlInAs/GaInAs coupled quantum wells (CQWs) is proposed. The operation of this device is based on the infrared absorption by the electrons in the ground state transited from the ground-state subband E1 of the CQWs to the third-excited-state subband E4. A large variation of eigenenergy spacing ΔE41 between E1 and E4 under an applied electric field can be achieved for the proposed AlInAs/GaInAs CQW system. Since the infrared radiation is absorbed via the intersubband resonance absorption ((h-dash-bar)ω=E4−E1), the detected infrared wavelength can be tuned by the spacing ΔE41 which can be adjusted by an applied electric field. The tunability of these AlInAs/GaInAs CQWs have been studied theoretically. Based on theoretical calculations, tuning ranges from 3 to 3.9 and 2.9 to 4.2 μm are predicted for the proposed asymmetric CQW structure and compositionally asymmetric CQW structure, respectively. This tuning capability is achieved by varying the applied electric field in the 90 to −90 kV/cm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358503
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  • 9
    Electronic Resource
    Electronic Resource
    Strong blueshift of the excitonic transition in the InGaAs/InP/InAsP antisymmetric coupled quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2603-2605 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new strained InGaAs/InP/InAsP antisymmetric coupled-quantum-well (CQW) structure with significant enhancement of the blue and red Stark effects in the first heavy-hole-to-electron excitonic transition is proposed in this letter. The calculated amount of blueshift is about 48 meV as the applied electric field varied from 0 to 90 kV/cm and the red Stark shift of about 56 meV can be achieved with an applied electric field in the 0 to −90 kV/cm range. The results of the strong Stark effect in the antisymmetric CQW structure may have potential applications in sophisticated new electronic devices, such as optical switching devices and tunable lasers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114309
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  • 10
    Electronic Resource
    Electronic Resource
    Very large blue and red Stark shifts of the excitonic transition in InGaAs-InP-InAsP antisymmetric coupled quantum wells (1996)
    Springer
    Optical and quantum electronics 28 (1996), S. 1305-1320 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A new strained InGaAs-InP-InAsP antisymmetric coupled quantum well (CQW) structure with both very large blue and red quantum-confined Stark shifts for the first heavy-hole-to-electron excitonic transition, E hh1fE e1, is studied theoretically in this paper. In the antisymmetric coupled quantum well, an antisymmetric-like pair of potential profiles between the shallow-deep conduction band profile and the deepshallow valence band profile are formed. The sub-band eigen-energies, E, and the associated envelope wave functions in the CQW structures with or without an applied electric field are calculated by the transfer-matrix method. The effect of strain on the pseudomorphic layers has been taken into account. Results indicate that the strained InGaAs-InP-InAsP antisymmetric CQW structure exhibits significant enhancement of the blue and red Stark effects in the E hh1fE e1 transition. The influences of various antisymmetric CQW structural parameters, such as the total well width, the individual well width, the central barrier thickness and the composition of the strained layer on the quantum-confined Stark shift, as well as the envelope wave function overlap, are studied systematically. These strong Stark effects in the antisymmetric CQW structure may have potential applications in sophisticated new electronic devices, such as optical switching devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00326203
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