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  • 1
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    Zoanthids of the Cape Verde Islands and their symbionts: previously unexamined diversity in the Northeastern Atlantic (2010)
    In:  Contributions to Zoology vol. 79 no. 4, pp. 147-163
    Details
    Publication Date: 2024-01-12
    Description: The marine invertebrate fauna of the Cape Verde Islands contains many endemic species due to their isolated location in the eastern Atlantic, yet research has not been conducted on most taxa here. One such group are the zoanthids or mat anemones, an order of benthic cnidarians (Hexacorallia: Zoantharia) common in many marine environments. In this study, the diversity of zoanthids in the Cape Verde Islands is specifically examined for the first time. Field images and sampling are combined with molecular phylogenetic analyses utilizing two mitochondrial DNA markers (cytochrome oxidase subunit I and 16S ribosomal DNA) to determine the number of species present. Specimens from eight species (Palythoa caribaeorum, Palythoa sp. 265, Zoanthus aff. pulchellus, Isaurus tuberculatus, Parazoanthus sp. 269, Parazoanthus sp. 1401, Antipathozoanthus macaronesicus, Terrazoanthus sp. 276) were identified, including two to four species that are likely new to science. Additional examinations of Symbiodinium endosymbionts in zooxanthellate species showed that clades A, B, and C were present; this is the first report of clade B associating with a zoanthid species. An appendix describing the eight zoanthid species found in the Cape Verde Islands is included to provide a base for future zoanthid research in this region.
    Keywords: Cape Verde Islands ; Cnidaria ; Symbiodinium ; undescribed species ; zoanthid
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 313-317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared attenuated total reflection spectra from thin SiO2 films sandwiched between a Ge prism and a Si substrate were investigated. The measurements were performed in the range of Si-O-Si stretching vibrations and compared with calculated spectra using bulk values for the SiO2 dielectric function. This comparison enabled confirmation of the experimentally observed peak broadening and peak shift of the longitudinal-optical-phonon mode at ∼1250 cm−1 for films thicker than 30 A(ring) by using the exact expression for calculating p-polarized spectra. It is also shown that the linear approximation for vibrational spectroscopy in this frequency range is only valid for thicknesses less than 15 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359394
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  • 3
    Electronic Resource
    Electronic Resource
    A Monte Carlo study of the pattern formation during transitions in n-alkane crystals (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 7627-7633 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rotator phase transition in n-alkane was recently found to show a characteristic pattern of preferred growth along the b-axis (shorter axis) of the unit cell. In order to investigate the origin of this anisotropic growth, a pattern formation in n-alkane crystal is studied during the transition between the low temperature orthorhombic (LO) phase and the rotator (R) phase by use of the Monte Carlo method. Of possible factors that will influence the growth pattern, we here concentrate on the mode of chain packing by assuming that the chains have rigid planar zigzag conformation and are placed in a regular orthohexagonal lattice. The herringbone order in the LO phase is found to develop rather quickly resulting characteristic domains with the (100) and (110) boundaries. The domain boundaries run preferentially along the b-axis at lower temperatures and are considered as a stacking fault or antiphase boundary. The transition between the LO phase and the R phase is found to exhibit a characteristic pattern, where the R phase domains grow preferentially along the b-axis. All these behaviors are shown to originate from different energies of the (100) and (110) boundaries. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.481357
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  • 4
    Electronic Resource
    Electronic Resource
    Longitudinal mode stability difference in Se- and Si-doped AlGaAs lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5344-5346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal mode behavior of AlGaAs lasers with n-type cladding layers doped with Se and Si is reported. The longitudinal mode of the lasers with highly Se-doped cladding layer is stabilized, and large hysteresis of mode jump is observed as temperature changes. In the case of highly Si-doped cladding layers, however, the mode hops to the adjacent one and no hysteresis is observed. These phenomena are explained by the difference in thermal activation energy between Se- and Si-related DX centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350551
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  • 5
    Electronic Resource
    Electronic Resource
    Core-level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high-resolution x-ray photoelectron spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2049-2051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical shifts of Si–Hx (x=1,2) species on Si surfaces obtained by ex situ chemical treatment have been evaluated by high-resolution x-ray photoelectron spectroscopy at a take-off angle of 5°. Optimizing the water rinse and sample loading conditions enables identification of the Si–Hx components of the Si 2p core-level spectra, whose intensities display strong dependence on crystallographic orientation and surface treatment. NH4F-treated Si(111) exhibits almost exclusive monohydride termination which induces a chemical shift of 250 meV relative to the bulk component. On the other hand, 4.5% HF-treated Si(111) and 1% HF-treated Si(100) surfaces show increased dihydride termination with an associated shift of 480 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115074
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  • 6
    Electronic Resource
    Electronic Resource
    Digital chemical vapor deposition of SiO2 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1096-1098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH4 and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2 film into a deep Si trench.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104284
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self-limiting process in the atomic layer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102493
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature nitridation of fluorinated silicon dioxide films in ammonia gas (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique of growing nitrided oxide at low temperatures has been developed. Fluorine-enhanced thermal oxidation of silicon in O2+NF3 at temperatures below 800 °C and subsequent annealing of the fluorinated oxide in pure ammonia gas at the same temperature result in the formation of nitrided oxide. The dielectric breakdown strength of the fluorinated oxide is improved by the nitridation. Also, the nitrided oxide acts as a protective layer against alkaline ion contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98783
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  • 9
    Electronic Resource
    Electronic Resource
    Unified analytic model of direct and Fowler–Nordheim tunnel currents through ultrathin gate oxides (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3580-3582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model to predict the gate tunnel current in metal–oxide–semiconductor structures has been developed by employing the nonparabolic E-k dispersion for describing the tunneling electron momentum. The tunnel electron effective mass mox and the Fermi energy in the gate have been used to fit the calculated tunnel current to the measured one. It is shown that in the direct tunneling regime the tunnel electron effective mass mox apparently increases with decreasing oxide thickness presumably due to the reduction of Si–O–Si bond angle in the compressively strained layer near the SiO2/Si interface, while in the Fowler–Nordheim tunneling regime mox remains constant at 0.50 m0. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330220
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  • 10
    Electronic Resource
    Electronic Resource
    Quantum confinement effect in self-assembled, nanometer silicon dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3881-3883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the SiO2 layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122923
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