Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 829-831
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new mechanism of misfit dislocation nucleation is demonstrated. Deliberate contamination with approximately 0.003 monolayers of Cu and subsequent annealing at 600 °C is shown by transmission electron microscopy, photoluminescence, and defect etching to produce dislocation half loops in a 1.1 μm layer of Si0.93Ge0.07 on a silicon substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105249
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