ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103497
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