Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 4205-4210
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We simulated capacitance–voltage (C–V) curves of Si3N4/GaAs, Si3N4/Si and also Si3N4/Semi* (virtual semiconductor) metal–insulator–semiconductor (MIS) capacitors and compared them with experimental C–V curves of a Si3N4/Si/GaAs structure. The experimental C–V curves of the Si3N4/Si/GaAs MIS capacitors are not in agreement with the simulated C–V curves of the Si3N4/GaAs and Si3N4/Si MIS capacitors, but are in agreement with those of the Si3N4/Semi* MIS capacitors, where Semi* is a virtual semiconductor with ni=7×1011 cm−3 or EG=0.88 eV. This indicates that the Si3N4/Si/GaAs structure is somewhat like a narrow band gap material with EG=0.88 eV. The comparison yields strong support for our theoretical energy band of the Si3N4/Si/GaAs MIS structure based on quantum well confinement. A depletion mode MIS field-effect-transistor (MISFET) is successfully fabricated with transconductance of 85 mS/mm, and an inversion mode MISFET is fabricated with transconductance of 0.05 mS/mm. The small transconductance for the inversion mode MISFET is ascribed to strong scattering due to confinement of electrons in the Si quantum well. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1403683
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