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  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of Cu adhesive energy on barrier metals by means of contact-angle measurement (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5989-5992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adhesive energies at Cu/SiO2, Cu/TiN, and Cu/TiW interfaces were investigated by measuring the contact angles of Cu particles to the substrate. To form the Cu particles, thin Cu films deposited on each substrate were annealed at 500 °C for 50 h. The adhesive energies are determined to be 0.8, 1.8, and 2.2 N/m for the SiO2, TiN, and TiW, respectively. The Cu particle on TiW film shows the highest adhesion. When TiW is used as a barrier metal, fine Cu lines are fabricated by reactive ion etching without peeling. On the other hand, Cu lines on the TiN film are peeled during the etching. This is consistent to the evaluation result that TiW has higher adhesive energy than TiN. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360604
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction of the hydrogen degradation in SrBi2(Ta1−xNbx)2O9 by TiN barrier metal (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5457-5462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of ferroelectric SrBi2(Ta1−xNbx)2O9 (SBTN) as a mainstream form of nonvolatile memory requires that the degradation of its electrical qualities that is caused by annealing in a hydrogen atmosphere be reduced. Titanium nitride (TiN) is a candidate for use as a barrier-metal layer against hydrogen diffusion. The relationship between the degradation in the qualities of SBTN and the quality of the TiN barrier metal has been investigated. TiN when sputtered onto SBTN capacitors creates a good barrier under all sputtering conditions, and maintains the electrical characteristics of the SBTN through annealing in an atmosphere of H2. Higher density TiN films provide more effective protection. The characteristics of the degraded capacitor were investigated in terms of its current-voltage characteristic. Remanent polarization can be recovered from, at least partially, by applying a series of bipolar pulses. This rejuvenation of the electrical qualities indicates that degradation arises from a combination of electrical and structural faults. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315621
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  • 3
    Electronic Resource
    Electronic Resource
    Compositional dependence of electrical characteristics of SrBi2(Ta1−xNbx)2O9 thin-film capacitors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6788-6794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric capacitors using SrBi2(Ta1−xNbx)2O9 (SBTN) were compositionally altered varying Nb concentration from 0 to 1, the corresponding I–V and P–E electrical characteristics evaluated from room temperature to 145 °C. These temperature evaluations reveal that the leakage current will increase with larger Nb concentration and the dominant conduction mechanism changes from Schottky to Frenkel–Poole emission. The ferroelectric hysteresis curve shifts in the direction of negative polarization as the temperature or the concentration of Nb increases. Concentration increases in Nb reduces the temperature dependence of remnant polarization and coercive field. Film resistance to imprint and degradation from elevated temperature improves. Substituting b-site Nb for Ta allows imprinted capacitors to recover by application of either bipolar fatigue pulses at room temperature (RT) or, cycling P–E measurement pulses at elevated temperature. Due to this asymmetrical tradeoff of film ferroelectric properties, there is an optimum identifiable range of Nb concentrations (0.25–0.5) capable of achieving memory performance. Optimized SBTN ferroelectric films will suitably perform in integrated circuit memory function applications provided that the leakage current incurred at higher Nb concentrations can be reduced. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369010
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  • 4
    Electronic Resource
    Electronic Resource
    Ti concentration effect on adhesive energy at Cu/TiW interface (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4941-4944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in adhesive energy at Cu/TiW interfaces caused by varying the Ti concentration were evaluated by means of contact angle measurement. The adhesive energy was evaluated by applying the Young–Dupré equation to the contact angle. Copper particles were fabricated by annealing thin Cu film deposited on the TiW film. The adhesive energies at the Cu/TiW interface were evaluated as 1.5, 2.1, and 2.6 N/m for a Ti concentration of 0, 10, and 20 wt. %, respectively. The adhesive energies were found to increase almost linearly as the Ti concentration was increased. These results were applied to prevent TiW/Cu/TiW interconnects fabricated by using infrared-assisted reactive ion etching from peeling at the Cu/TiW interface. In annealing Cu films on TiW substrates at 600 °C in a vacuum, it was found that the Cu peeled from the TiW when the Ti concentration was 10 wt. %, but it stuck to that at 20 wt. %. The effect of Ti on the adhesion strength was also studied from the results of molecular calculation by using the method. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368805
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of magnesium ion and chelating agents on enzymatic production of ATP from adenine (1985)
    Springer
    Applied microbiology and biotechnology 21 (1985), S. 143-147 
    Details
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Summary As reported previously, enzymatic production of ATP from adenine by resting cells of Brevibacterium ammoniagenes (Fujio and Furuya 1983) accumulated 13.0 mg of ATP · Na2 · 3H2O/ml, but ATP formation ceased within 6–8 h. Simultaneous addition of magnesium ion and phytic acid, a chelator of divalent cations, allowed ATP formation to continue longer, and 24.2 mg of ATP · Na2 · 3H2O/ml was accumulated in 10 h. However, ATP formation ceased thereafter. This second cessation was found to be caused by the lack of magnesium ion active as a co-factor (Mgact). The Mgact was tentatively taken as the difference between soluble magnesium ion (Mgsol) and the ion chelated by an equimolar amount of ATP (MgATP), namely Mgact=Mgsol-MgATP. In order to provide Mgact, sufficient phytic acid had to be added at the beginning of the reaction and magnesium ion was also added intermittently. Under these conditions ATP formation continued further, and the rate of ATP formation was increased; 37.0 mg of ATP · Na2 · 3H2O/ml was accumulated in 13 h. Since whole culture broth is preferable to frozen cells as a practical enzyme source, the conditions neccessary for use of whole culture broth of B. ammoniagenes were also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00295109
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  • 6
    Electronic Resource
    Electronic Resource
    Functional expression of the genes of Escherichia coli in gram-positive Corynebacterium glutamicum (1984)
    Springer
    Molecular genetics and genomics 196 (1984), S. 175-178 
    Details
    ISSN: 1617-4623
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Hybrid plasmids were constructed by combining in vitro the Escherichia coli plasmid pGA22, which carries the genes determining resistance to kanamycin, tetracycline, chloramphenicol and ampicillin, with the cryptic plasmids, pCG1 and pCG2, of Corynebacterium glutamicum. The hybrid plasmids were introduced into C. glutamicum and E. coli and replicated in both hosts. They expressed all the E. coli resistance phenotypes except ampicillin resistance in C. glutamicum. The levels of antibiotic inactivating enzymes encoded on these plasmids were about four to ten times lower in C. glutamicum than in E. coli. Despite the lack of expression of ampicillin resistance, β-lactamase activity was detected in C. glutamicum carrying hybrid plasmids.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00334113
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  • 7
    Electronic Resource
    Electronic Resource
    Accumulation of 5′ guanine nucleotides by mutants of Brevibacterium ammoniagenesThis is Part XLII of the series of reports entitled “Production of Nucleic Acid- Related Substances by Fermentative Processes”. (1973)
    New York, NY [u.a.] : Wiley-Blackwell
    Biotechnology and Bioengineering 15 (1973), S. 795-803 
    Details
    ISSN: 0006-3592
    Keywords: Chemistry ; Biochemistry and Biotechnology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: 5′Xanthylic acid was efficiently converted to 5′guanine nucleotides (5′GMP, 5′GDP, and 5′GTP) without being degraded to guanine via 5′GMP by decoyinine resistant mutants of strain KY 13315 which had been isolated from Brevibacterium ammoniagenes and was practically devoid of 5′nucleotide degrading activity. The concentration of phosphate in the medium showed a profound effect on the ratio of the accumulated 5′guanine nucleotides, making it possible to direct the fermentation towards 5′GMP or 5′GTP. A direct accumulation of 5′guanine nucleotides from carbohydrate was possible by mixed cultivation of a 5′XMP accumulating strain and a 5′XMP converting mutant. A maximum concentration of 9.67 mg of 5′guanine nucleotides per ml was obtained directly from glucose in such a mixed culture.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/bit.260150411
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  • 8
    Electronic Resource
    Electronic Resource
    Conversion of 5′xanthylic acid to guanine and guanine nucleotides by a mutant of Brevibacterium ammoniagenesThis is Part XXXV of the series of reports entitled “Production of Nucleic Acid-Related Substances by Fermentative Processes.” (1971)
    New York, NY [u.a.] : Wiley-Blackwell
    Biotechnology and Bioengineering 13 (1971), S. 229-240 
    Details
    ISSN: 0006-3592
    Keywords: Chemistry ; Biochemistry and Biotechnology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A decoyinine resistant, KY 13501, isolated after nitrosoguanidine treatment from Brevibacterium ammoniagenes ATCC 6872 converted 5′XMP added in fermentation media to guanine derivatives and accumulated them in the media. The converted substances were identified as guanine, 5′GMP, 5′GDP, and 5′GTP. The conditions for the conversion were examined and the following points were clarified. (1) Very low concentration of manganese ion (Mn2+) showed profound effects on the conversion and the excessive amounts of the ion severely repressed the conversion. (2) Under limitation of Mn2+, 5′XMP was converted most efficiently when added at inoculation time. (3) The inhibition of the conversion by excessive amount of Mn2+ was completely released by addition of a surface activating agent, polyoxyethylene stearylamine. (4) For the conversion, it was essential to maintain pH of the media at 7.5 to 8.0 and supply ammonium ion.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/bit.260130206
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  • 9
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    Compositional dependence of electrical characteristics of SrBi2(Ta1−xNbx)2O9 thin-film capacitors (1998)
    American Institute of Physics
    Details
    Publication Date: 1998-12-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Ta penetration into template-type porous low-k material during atomic layer deposition of TaN (2005)
    American Institute of Physics
    Details
    Publication Date: 2005-11-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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