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  • 1
    Electronic Resource
    Electronic Resource
    New deep acceptor in epitaxial cubic SiC (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2757-2759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the temperature and excitation intensity dependence of photoluminescence (PL) spectra in several undoped and lightly Al-doped thin films of cubic SiC grown by chemical vapor deposition on Si substrates. The low-power PL spectra in all samples studied exhibit a deep donor-acceptor pair PL band which involves a previously undetected deep acceptor (EA=470 meV). The pervasive character of this deep acceptor suggests the possibility that it is at least partially responsible for the high compensation observed in undoped films of cubic SiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101946
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  • 2
    Electronic Resource
    Electronic Resource
    Novel technique for growth-etch cycling of flame-deposited diamond films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2490-2492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a novel technique for growth-etch cycling of diamond films deposited with an oxygen-acetylene torch, whereby a spinning wheel with removable teeth periodically disrupts the depositing flame in open atmosphere to allow air etching of a heated substrate. Cycling times as short as 0.02 s, with a growth/etch time ratio of approximately 19, have produced films with macro-Raman peak widths (full width at half-maximum) of approximately 3 cm−1. A predominance of large 100 crystal faces, with dimensions up to 300 μm, is evident in optimized films. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112647
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  • 3
    Electronic Resource
    Electronic Resource
    Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2287-2289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron paramagnetic-resonance study of diamond films doped by implantation of phosphorus during film deposition is reported. Samples with nominal phosphorus concentration between 1016 and 1017 cm−3 exhibit two isotropic lines of equal intensity separated by 27 G. The double-line spectrum is expected for a nuclear-spin 1/2 species such as phosphorus. The symmetry of the center and the temperature dependence of the spin concentration suggest that phosphorus forms a substitutional shallow donor in diamond. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112720
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  • 4
    Electronic Resource
    Electronic Resource
    Infrared dielectric constant of cubic SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7255-7258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real dielectric constant for chemical vapor deposition 3C-SiC grown on silicon (Si) has been determined at 300 K and at 5 K from an analytic fit to interference fringes in transmission over the spectral range from the near infrared to the submillimeter region. This technique is capable of high accuracy being limited typically by the sample thickness and accuracy with which the thickness is measured. The resulting real dielectric constant is lower than the values usually attributed to this material. We find: at 300 K ε 0=9.52 and ε ∞=6.38; at 5 K ε0=9.28 and ε ∞=6.22. In all cases the estimated error is ±0.8%. The observed ratio ε0 /ε∞ agrees with the Lyddane–Sachs–Teller relation to 0.1% at 300 K and 0.2% at 5 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360438
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  • 5
    Electronic Resource
    Electronic Resource
    Al and B ion-implantations in 6H- and 3C-SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2479-2485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low (keV) and high (MeV) energy Al and B implants were performed into n-type 6H- and 3C-SiC at both room temperature and 850 °C. The material was annealed at 1100, 1200, or 1400 °C for 10 min and characterized by secondary ion mass spectrometry, Rutherford backscattering (RBS), photoluminescence, Hall and capacitance-voltage measurement techniques. For both Al and B implants, the implant species was gettered at 0.7 Rp (where Rp is the projected range) in samples implanted at 850 °C and annealed at 1400 °C. In the samples that were amorphized by the room temperature implantation, a distinct damage peak remained in the RBS spectrum even after 1400 °C annealing. For the samples implanted at 850 °C, which were not amorphized, the damage peak disappeared after 1400 °C annealing. P-type conduction is observed only in samples implanted by Al at 850 °C and annealed at 1400 °C in Ar, with 1% dopant electrical activation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358776
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  • 6
    Electronic Resource
    Electronic Resource
    The nature of donor conduction in n-GaN (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5901-5903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type conduction. In this communication we present the first systematic study of near conduction band edge states in n-type GaN samples deposited over basal plane sapphire substrates using low pressure metal organic chemical vapor deposition. Electron spin resonance, low temperature photoluminescence, and Van der Pauw–Hall measurements were used as the basis for our study. We concluded that the residual n-type conduction in GaN results from a band of delocalized donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354168
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  • 7
    Electronic Resource
    Electronic Resource
    Diamond growth in turbulent oxygen-acetylene flames (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7561-7571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Turbulent premixed oxygen-acetylene flames have been used to synthesize polycrystalline diamond films on molybdenum substrates at temperatures ranging from 500 to 1300 °C and facetted single crystals on mm-sized natural diamond substrates at temperatures of 1200–1300 °C. Turbulence was achieved by increasing the torch's orifice diameter and/or the flow velocity; the presence of turbulence was confirmed by observations of changes in the flame shape, measurements of the flame's noise spectrum, and calculations of the Reynolds number. The optical emission spectra of several diamond-growing turbulent flames were also compared to the spectra of laminar flames. The variation in diamond quality with temperature and oxygen acetylene flow ratio was studied with one or more of the following techniques: Raman spectroscopy, scanning and transmission electron microscopy, infrared spectroscopy, and photoluminescence spectroscopy. Crystals grown on molybdenum at temperatures of 600–1100 °C were observed to be transparent, and under the proper conditions the quality of diamond grown epitaxially in a turbulent flame equals that of natural type-IIa diamond. Although this enhanced quality has only been observed for fairly lean flames, the growth rate for type-IIa quality diamonds can still exceed 35 μm/h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354982
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  • 8
    Electronic Resource
    Electronic Resource
    Optically detected magnetic resonance of cubic SiC grown by chemical vapor deposition on Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6170-6173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two distinct spectra are reported from an optically detected magnetic resonance study of epitaxial films of cubic SiC. The first is a Lorentzian, single line with g=2.0065±0.0015, which is strong in Al-doped SiC. This line is attributed to residual donors. The second spectrum, observed in both Al-doped and undoped samples, is dominated by a pair of exchange-split lines with g=2.0024 and a=0.095 cm−1. Although a definite assignment of this spectrum cannot be made, spectral dependence studies show it is associated with a defect-related luminescence band in the energy range from 1.6 to 1.9 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346906
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  • 9
    Electronic Resource
    Electronic Resource
    Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2843-2852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor (MESFET) have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built-in electric field associated with the trapped charge distribution. For a MESFET in which two distinct trapping centers have been spectrally resolved, the experimentally measured dependence upon light intensity was fitted using this model. The two traps were found to have very different photoionization cross-sections but comparable concentrations (4×1011 cm−2 and 6×1011 cm−2), suggesting that both traps contribute comparably to the observed current collapse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287127
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2011-2016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectroscopy has been used to characterize as-grown and ion-implanted 3C-SiC films grown by chemical vapor deposition on Si(100) substrates. The D1 and D2 defect PL bands reported previously in ion-implanted Lely-grown SiC were also observed in the as-grown chemical vapor deposited films, and the effects of annealing (1300–1800 °C) on these PL bands as observed in as-grown films and films implanted with B, Al, or P have been studied. As reported previously for Lely-grown SiC, the spectral details of the defect PL bands and their annealing characteristics were found to be independent of the particular implanted-ion species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337997
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