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  • 1
    Electronic Resource
    Electronic Resource
    Recrystallization behavior of silicon implanted with iron (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5423-5426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1×1015 cm−2, 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and released when they are reached by the moving a-c interface during the SPEG process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350564
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical activation of bismuth implanted into silicon by rapid thermal annealing and kinetics of defects (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 119-122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapid thermal annealing (RTA) of Si implanted with Bi+, to a dose of 5.0×1014 cm−2 at the energy of 150 keV, was investigated using sheet resistivity, Hall measurements, and channeling analysis. Approximately 95% of the Bi dose is found substitutional and 90% is electrically active after annealing is performed at 600 °C for times longer than 1 min. The electrical activation yield of Bi after RTA at temperatures ≥700 °C is observed to decrease when increasing the temperature and time of the annealing process. The data taken from electrical measurements and angular scan across the 〈100〉 axis are evidence that the electrically inactive concentration of the Bi correlates with the concentration of Bi atoms located slightly displaced from the crystal rows.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354142
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal behavior and range distribution of 209Bi implanted into the Al/V bilayer structure (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4431-4434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 350-keV 209Bi+ was implanted into an Al (1000 A(ring))/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (trim code). Diffusion coefficients for Bi in both the V substrate of the Al/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °C. The results show that the Bi ions follow a hindered diffusion at the Al film of the Al/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340161
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  • 4
    Electronic Resource
    Electronic Resource
    Implanted boron depth profiles in the AZ111 photoresist (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2083-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isotope 10B has been implanted into the photoresist AZ111 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 10B(n,α)7Li reaction. At 60 keV, the profile changes from a regular shape to one with an additional tail directed towards the surface. Despite the nonregular shape of the ion distributions, it is possible to extract the characteristic range parameters such as projected range Rp, most probable range Rˆ, and full width at half-maximum. Good agreement is found between the experimental results and the calculations by Ziegler, Biersack, and Littmark (ZBL). It is also shown that the tail distribution follows closely the ZBL calculated ionization profiles. A tentative explanation of this behavior is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341112
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  • 5
    Electronic Resource
    Electronic Resource
    Patterning method for silicides based on local oxidation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3459-3461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation of CoSi2 layers on Si(100) using oxidation masks has been investigated. It is shown that local oxidation can be used to pattern the silicide layer. This method allows the formation of buried interconnects and metallized silicon mesa structures. Epitaxial CoSi2 silicide layers were grown by molecular beam epitaxy on Si(100). The SiO2/Si3N4 oxidation mask was patterned photolithographically with linewidths of typically 1.5 μm. During thermal oxidation, SiO2 forms in the unprotected regions of the silicide layer. The silicide is pushed into the substrate in these regions. At a critical oxide thickness, the oxidized region of the silicide layer separates from the unoxidized, in conformance with the structure of the oxidation mask. The oxide capped silicide maintains its uniform layer structure and its single crystallinity in spite of the large shift into the substrate. The method should be applicable also to polycrystalline silicides, such as TiSi2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115246
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced damage accumulation in carbon implanted silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3596-3597 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage profiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses (approximately-greater-than)2×1015 cm−2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111209
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  • 7
    Electronic Resource
    Electronic Resource
    Overpressurized bubbles versus voids formed in helium implanted and annealed silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 732-734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of helium induced cavities in silicon is studied as a function of implant energy (10 and 40 keV) and dose (1×1015, 1×1016, and 5×1016 cm−2). Specimens are analyzed after annealing (800 °C, 10 min) by transmission electron microscopy (TEM) and elastic recoil detection (ERD). Cavity nucleation and growth phenomena are discussed in terms of three different regimes depending on the implanted He content. For the low (1×1015 cm−2) and high (5×1016 cm−2) doses our results are consistent with the information in the literature. However, at the medium dose (1×1016 cm−2), contrary to the gas release calculations which predict the formation of empty cavities, ERD analysis shows that a measurable fraction of the implanted He is still present in the annealed samples. In this case TEM analyses reveal that the cavities are surrounded by a strong strain field contrast and dislocation loops are generated. The results obtained are discussed on the basis of an alternative nucleation and growth behavior that allows the formation of bubbles in an overpressurized state irrespective of the competition with the gas release process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118251
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  • 8
    Electronic Resource
    Electronic Resource
    Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 972-974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: He+ ions were implanted at 40 keV into Si 〈100〉 channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. A subsequent annealing at 800 °C was performed in order to anneal the implantation damage and redistribute the Cu into the wafer. The samples were analyzed by Rutherford backscattering channeling and transmission electron microscopy techniques. The Cu distribution was measured by secondary ion mass spectrometry (SIMS). The SIMS experiments show that, while the 350 °C implant induces gettering at the He projected range (Rp) region, the same implant performed at RT has given as a result, gettering at both the Rp and Rp/2 depths. Hence, this work demonstrates that the Rp/2 effect can be induced by a light ion implanted at low energy into channeling direction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289062
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  • 9
    Electronic Resource
    Electronic Resource
    Depth profile and thermal annealing behavior of Bi implanted into an Al/Ti bilayer structure (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 659-662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 600-keV Bi was implanted into an Al/Ti bilayer structure. There is good agreement between the Bi depth profile measured by Rutherford backscattering and corresponding theoretical prediction (Monte Carlo code trim). After annealing at low temperatures, the pronounced structure of Bi concentration at the Al/Ti interface vanishes, and the buildup of a surface precipitation is observed. At 500 °C annealing, strong Bi diffusion sets in, associated with the intermixing of the substrate components. A thin oxide layer present at the surface acts as a diffusion barrier for Bi, resulting in Bi segregation at the oxide/alloy interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336178
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  • 10
    Electronic Resource
    Electronic Resource
    Au diffusion in α-Ti (1994)
    Springer
    Applied physics 58 (1994), S. 453-457 
    Details
    ISSN: 1432-0630
    Keywords: 66.30.−h ; 66.30.Jt ; 61.80.Jh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The solubility and diffusion of Au in α-Ti have been studied in a 823–1023 K temperature range using the Rutherford backscattering technique. For this purpose we have implanted Au into α-Ti samples. Our results show that the solubility of Au varies between 0.2 and 0.35 at.%. In addition, we found that the diffusion coefficients follow a normal Arrhenius behavior with Q=260 kJ/mol and D o=1.9×10−5 m2/s1. These values are typical for a substitutional diffusion mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332436
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