Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3944-3946
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
To explain various temperature-dependent resistivity measurements [R(T)] on bismuth (Bi) nanowires as a function of wire diameter down to 7 nm, a semiclassical transport model is developed, which explicitly considers anisotropic and nonparabolic carriers in cylindrical wires, and the relative importance of various scattering processes. R(T) of 40 nm Bi nanowires with various Te dopant concentrations is measured and interpreted within this theoretical framework. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126829
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