ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The gate voltage dependent charge distribution within the quantum wells of modulation δ-doped In0.29Al0.71As/In0.3Ga0.7As heterostructures, grown by molecular beam epitaxy and fabricated into front-gated, six-arm, Hall bar configurations, were evaluated by means of resistivity, Hall effect, and Shubnikov–de Haas (SdH) oscillatory magnetoresistance measurements. δ-doping the barrier layer with Si to 6×1012/cm2 leads to an apparent electron density, as obtained from Hall measurement made at 1.6 K, ns=2.65×1012/cm2. The SdH spectra exhibit a gate voltage-dependent transition from one subband to two subbands and the total electron density is in good agreement with that obtained from the Hall data. From a fast Fourier transform of the SdH data and low field magnetoresistance measurements the electron densities and mobilities of the two subbands at Vg=0 were found to be ns1=2.39×1012 cm−2, μ1=21 800 cm2/V s and ns2=3.96×1011 cm−2, μ2=16 000 cm2/V s, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357243
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