Publikationsdatum:
2010-12-18
Beschreibung:
Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉McCamey, D R -- Van Tol, J -- Morley, G W -- Boehme, C -- New York, N.Y. -- Science. 2010 Dec 17;330(6011):1652-6. doi: 10.1126/science.1197931.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112, USA. dane.mccamey@sydney.edu.au〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21164011" target="_blank"〉PubMed〈/a〉
Print ISSN:
0036-8075
Digitale ISSN:
1095-9203
Thema:
Biologie
,
Chemie und Pharmazie
,
Informatik
,
Medizin
,
Allgemeine Naturwissenschaft
,
Physik
Permalink