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  • 1
    Electronic Resource
    Electronic Resource
    Non-ohmic behavior of the high-field magnetoresistances in AlGaAs/GaAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2052-2055 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication are reported the measurements and analyses of the dependence of the high-field magnetoresistivities (ρxx and ρxy) on the current density in AlGaAs/GaAs heterojunctions. The strong current dependence of spin-up and spin-down levels can be observed both for ρxx and for ρxy. It was found that at low temperatures and in strong magnetic fields a quantity R=B(dρxy/dB), with B the magnetic field, exhibits similar line shape and non-ohmic behavior to those of ρxx, which dramatically confirms the unresolved proportionality ρxx∼R. In high magnetic fields R shows a stronger oscillation structure, especially for spin levels, than that observed in ρxx. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358844
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical investigation of laser gain in AlGaInN quaternary quantum wells (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2451-2453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microscopic calculations of laser gain spectra are presented for AlGaInN wurtzite quantum-well structures that are under compressive, zero and tensile strain. It is found that the optical nonlinearities induced by the combination of strain, quantum-confined Stark effect and many-body Coulomb interactions give rise to optical behavior that can differ significantly from that in conventional semiconductor lasers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465523
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  • 3
    Electronic Resource
    Electronic Resource
    Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 400-402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron and hole transport in compensated InGaAsN ((approximate)2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale ((very-much-greater-than) mean free path) material inhomogeneities, not a random alloy-induced mobility edge. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126989
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  • 4
    Electronic Resource
    Electronic Resource
    Bistable output from a coupled-resonator vertical-cavity laser diode (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3319-3321 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 μW to the electrical power applied to the top cavity. The bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326840
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  • 5
    Electronic Resource
    Electronic Resource
    InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 729-731 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design, growth by metalorganic chemical vapor deposition, and processing of an In0.07Ga0.93As0.98N0.02 solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6–0.8 μm, and solar cell internal quantum efficiencies 〉70% are obtained. Optical studies indicate that defects or impurities, from InGaAsN doping and nitrogen incorporation, limit solar cell performance. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123105
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  • 6
    Electronic Resource
    Electronic Resource
    InAsSb-based mid-infrared lasers (3.8–3.9 μm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 465-467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gain-guided, injection lasers using AlAsSb for optical confinement and a strained InAsSb/InAs multiquantum well active region were grown by metalorganic chemical vapor deposition. The semi-metal properties of a p-GaAsSb/n-InAs heterojunction are utilized as a source for injection of electrons into the active region of the laser. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8–3.9 μm. We also report on the two-color emission of a light-emitting diode with two different active regions to demonstrate multistage operation of these "unipolar '' devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118141
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of n- and p-type Al(As)Sb by metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 932-934 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlSb and AlAsxSb1−x epitaxial films grown by metalorganic chemical vapor deposition were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500 ° C and 76 Torr using trimethylamine alane and triethylantimony. AlAs0.16Sb0.84 films lattice matched to InAs were grown at 600 ° C and 76 Torr by adding arsine. Secondary ion mass spectroscopy showed C and O levels below 2×1018 and 6×1018 cm−3, respectively, for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn-doped AlAs0.16Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between 1×1017 to 5×1018 cm−3 for Zn-doped material and electron concentrations in the low to mid- 1018 cm−3 for Sn-doped material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116235
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  • 8
    Electronic Resource
    Electronic Resource
    Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1332-1334 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pseudomorphic, compressively strained InAs0.94Sb0.06 multiple quantum well injection laser, emitting in the 3.5–3.6 μm range is reported. The device was grown by metalorganic chemical vapor deposition, and x-ray and optical characterization indicate that the active region has a very low dislocation density. In pulsed mode, the laser operated at 135 K and displayed a characteristic temperature of 33 K, equaling the highest value reported for molecular-beam epitaxy grown, InAsSb/InAlAsSb active region lasers of comparable wavelength. Factors limiting the performance of these lasers are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115925
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  • 9
    Electronic Resource
    Electronic Resource
    Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3188-3190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 μm with 80 μW of power at 300 K and 200 mA average current. The laser displayed 3.86 μm emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119154
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  • 10
    Electronic Resource
    Electronic Resource
    High slope efficiency, "cascaded" midinfrared lasers with type I InAsSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2093-2095 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lasers and light-emitting diodes with multistage, type I InAsSb/InAsP quantum well active regions are reported. These ten stage, cascaded devices were grown by metalorganic chemical vapor deposition. The broadband light-emitting diodes produced high average powers, 〉2 mW (∼80 K, 3.7 μm) and 〉0.1 mW (∼300 K, 4.3 μm). A 3.8–3.9 μm laser structure operated up to T=180 K. At 80 K, peak power 〉100 mW and a slope efficiency of 48% (4.8% per stage) were observed in our gain guided lasers. The slope efficiency was strongly dependent on cavity length, and analysis of efficiency data suggests an internal differential quantum efficiency 〉1 and a loss coefficient ≥100 cm−1. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121286
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