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  • 1
    Series available for loan
    Series available for loan
    Fachvorträge beim II. Internationalen Kurs für Landkartendruck und -reproduktion 1960 in München (1961)
    München : Beck
    Associated volumes
    Details Availability
    Call number: SR 99.0125(75)
    In: Deutsche Geodätische Kommission bei der Bayerischen Akademie der Wissenschaften
    Type of Medium: Series available for loan
    Pages: 235 S.
    Series Statement: Deutsche Geodätische Kommission bei der Bayerischen Akademie der Wissenschaften : Reihe B, Angewandte Geodäsie 75
    Language: German
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Resonant tunneling in (001)- and (111)-oriented III–V double-barrier heterostructures under transverse and longitudinal stresses (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7763-7769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of the effects of external stress on the current–voltage characteristics of double-barrier (001)- and (111)-oriented resonant tunneling devices are presented. Crystal strains arising from the application of external pressure and, in pseudomorphic structures, lattice mismatch cause shifts in the conduction and valence bands of the well and barrier layers with respect to the unstrained alignment. For certain stress orientations piezoelectric effects give rise to internal electric fields parallel to the current direction. The combined piezoelectric and band-structure effects modulate the transmission resonances which control the shape of the current versus voltage characteristics of the structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362381
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  • 3
    Electronic Resource
    Electronic Resource
    Coimplantation of silver and halogens in thin SiO2 films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3915-3920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver and halogens, Br and Cl, were coimplanted into thin SiO2 films sandwiched on a field-effect structure. Compositional depth distribution and chemical states of the implants were measured by means of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Ion sensitivity of the surface layer was measured using a capacitive field-effect structure, electrolyte–insulator– semiconductor. Silver halides were found to be incorporated in SiO2 in addition to metallic silver. The distribution of the implanted silver sensitively responds to the reactive halogens subsequently implanted into a silver-containing surface. The solid phase of silver halides with a concentration of less than 10 at. % delivers a distinct ion sensing characteristic toward halide ions in an electrolyte solution, comparable to that of bulk material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361817
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  • 4
    Electronic Resource
    Electronic Resource
    Piezoelectric effect in (001)- and (111)-oriented double-barrier resonant tunneling devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7770-7774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show experimentally that current–voltage characteristics of double-barrier resonant tunneling devices (DBRTDs) can be modified by internal polarization fields due to the piezoelectric effect induced by external uniaxial stresses. Electric polarization fields, perpendicular to the interfaces, arise in DBRTDs grown on (001)-oriented substrates under uniaxial, compressive stresses parallel to the (110) or (11¯0) crystal orientations, and in DBRTDs grown on (111)B-oriented substrates under stress parallel to (111) crystal orientation. The voltages at which the resonant tunneling current peaks occur (peak voltages) are sensitive to the polarization fields induced by external stresses. The peak voltages can shift to more positive voltages or more negative voltages depending on the directions of applied stresses. We measured current–voltage characteristics of AlAs/GaAs/AlAs double-barrier resonant tunneling structures as a function of external stresses at 77 K. Uniaxial stress was applied parallel to the (110) and the (11¯0) crystal orientations for (001)-oriented DBRTDs, as well as to the (111) orientation for (111)B-oriented DBRTDs. With the substrates grounded in all the measurements, we found that the peak voltages shift to more positive voltages for (001)-oriented DBRTDs under stress along the (110) orientation and for (111)-oriented DBRTDs under the stress along (111) orientation, and to more negative voltages for (001)-oriented devices under stress along the (11¯0) orientation. The results are in agreement with our calculations published in the preceding article, which take into account the piezoelectric effect and band alignment under stress. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362382
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  • 5
    Electronic Resource
    Electronic Resource
    Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 502-505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [11¯0] directions on MODFETs that were grown on a (001) substrate produced threshold shifts of opposite sign. Stresses in [110] and [11¯0] directions resulted in threshold voltage pressure coefficients of −15 and 64 mV/Kbar, respectively. The asymmetric shifts in the threshold voltages are attributed to piezoelectric effects. In addition, stress induced changes in the slopes of the transconductance versus gate-to-source voltage relationships were also measured. For stresses in the [110] and [11¯0] directions, the dependencies were 0.4 and −0.7 mS/(VKbar), respectively.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364126
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  • 6
    Electronic Resource
    Electronic Resource
    In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3741-3746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission line method patterns were fabricated on AlGaAs/GaAs heterostructures to measure the effect of uniaxial stress on the heterojunction two-dimensional electron gas resistivity and the contact resistance. Uniaxial compressive stress was applied in the [110] and [11¯0] directions of heterojunctions fabricated on (001)-oriented GaAs substrates. Fitting the measured data to a lumped resistor model yielded normalized sheet resistivity stress coefficients of −3.2%/kbar and 12.6%/kbar for stress in the [110] and [11¯0] directions, respectively. From these coefficients we obtain a value for the piezoelectric constant e14 of Al0.4Ga0.6As to be −0.26 C/m2, which when linearly extrapolated to AlAs gives −0.40 C/m2 compared to the value −0.225 C/m2 calculated by Hübner [Phys. Status Solidi B 57, 627 (1973)]. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368552
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  • 7
    Electronic Resource
    Electronic Resource
    High field electron transport properties of bulk ZnO (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6864-6867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Monte Carlo method is used to simulate electron transport for electric field strengths up to 350 kV/cm in bulk, wurtzite structure ZnO. The relevant parts of the conduction bands of a first-principles band structure are approximated by spherically symmetric, nonparabolic valleys located at the Γ and Umin symmetry points of the Brillouin zone. It is shown that the analytic expressions represent the band structure and the density of states well over a range of nearly 5 eV from the bottom of the conduction band. The simulated electron steady-state drift velocity versus electric field characteristics are calculated for lattice temperatures of 300, 450, and 600 K. For room temperature, drift velocities higher than 3×107 cm/s are reached at fields near 250 kV/cm. Examination of the electron energy distributions shows that the strong decrease of the differential mobility with increasing electric field in the field range studied is to be associated with the pronounced nonparabolicity of the central valley and not with transfer of electrons to satellite valleys. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371764
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  • 8
    Electronic Resource
    Electronic Resource
    Electron transport characteristics of GaN for high temperature device modeling (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4777-4781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN. Analytic expressions for spherical, nonparabolic conduction band valleys at the Γ, U, M, and K symmetry points of the Brillouin zone are matched to experimental effective mass data and to a pseudopotential band structure. The low-field electron drift mobility is calculated for temperatures in the range of 300–600 K and for ionized impurity concentrations between 1016 and 1018 cm−3. Compensation effects on the mobility are also examined. Electron drift velocities for fields up to 500 kV/cm are calculated for the above temperature range. To aid GaN device modeling, the drift mobility dependences on ambient temperature, donor concentration, and compensation ratio are expressed in analytic form with parameters determined from the Monte Carlo results. Analytic forms are also given for the peak drift velocity and for the field at which the velocity peak is reached as functions of temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367269
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  • 9
    Electronic Resource
    Electronic Resource
    Monte Carlo calculation of electron transport properties of bulk AlN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1446-1449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Monte Carlo method is used to simulate electron transport in bulk, wurtzite phase AlN using a three valley analytical band structure. Spherical, nonparabolic conduction band valleys at the Γ, K, and U symmetry points of the Brillouin zone are fitted to a first-principles band structure. The electron drift mobility is calculated as a function of temperature and ionized donor concentration in the ranges of 300–600 K and 1016–1018 cm−3, respectively. The effect of compensation on ionized impurity scattering and the associated change in the mobility are considered. The simulated electron steady-state drift velocity and valley occupancy for electric fields up to 600 kV/cm are presented for 300, 450, and 600 K. Our calculations predict that AlN will exhibit a much smaller negative differential mobility effect than GaN, and that the drift velocity versus electric field curve will show a very broad peak. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366848
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  • 10
    Electronic Resource
    Electronic Resource
    Piezoelectric effects in (001)-oriented double barrier resonant tunneling structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1358-1360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that piezoelectric effects can give rise to internal electric fields that modify the current–voltage characteristics of double barrier resonant tunneling devices, if suitable stresses are applied. Electric polarization fields in the direction perpendicular to the interfaces arise in heterostructures on (001)-oriented substrates under uniaxial stress parallel to the (110) or (11¯0) orientations. We measured current–voltage characteristics of (001)-oriented AlAs/GaAs/AlAs double barrier structures as a function of uniaxial external stress applied parallel to the (110) and the (11¯0) orientations. The substrate contact was grounded in all measurements. Under (110) stress, the resonance peaks shift to more positive voltages for both positive and negative bias. For (11¯0) stress, the peaks shift toward more negative voltages. We also calculated the current–voltage characteristics of resonant tunneling structures under uniaxial stress, taking into account stress effects on the band alignment and piezoelectric effects. We obtain satisfactory agreement between our calculations which contain no adjusted parameters and the measured data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113200
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