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  • 1
    Digitale Medien
    Digitale Medien
    Voltage offsets and imprint mechanism in SrBi2Ta2O9 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4573-4577 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is shown that voltage shifts in the hysteresis response of SrBi2Ta2O9 (SBT) thin-film capacitors can be induced using both thermal and optical methods. These voltage shifts are important since they can lead to imprint failure in ferroelectric memory devices. It is suggested that the voltage shifts in the hysteresis curve of SBT are caused by trapping of electronic charge carriers near the film/electrode interfaces, as has been previously reported for the Pb(Zr,Ti)O3 (PZT) system. In addition, a direct correlation is established between the magnitude and sign of remanent polarization (Pr) and the thermally induced voltage shifts (Vi), where Vi=αPr+β. It is also found that, unlike the PZT system, the thermally induced voltage shifts in SBT are smaller than those optically induced. One possible implication of this result is that the contribution of defect–dipole complexes to the voltage shifts in SBT is negligible. We suggest that the smaller contribution of defect-dipole complexes to the voltage shifts in SBT may be related to a smaller oxygen vacancy concentration in the perovskite sublattice of SBT as compared to that of PZT. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363440
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  • 2
    Digitale Medien
    Digitale Medien
    Effect of B-site cation stoichiometry on electrical fatigue of RuO2//Pb(ZrxTi1−x)O3//RuO2 capacitors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1013-1016 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: There have been numerous reports that Pb(ZrxTi1−x)O3 (PZT) thin-film capacitors with RuO2 electrodes and compositions near the morphotropic phase boundary exhibit minimal decrease in switched polarization with electric-field cycling. We show that the fatigue performance of RuO2//PZT//RuO2 capacitors strongly depends on PZT film composition. Specifically, we demonstrate that the rate of polarization fatigue increases with increasing Ti content for PZT thin films of tetragonal crystal symmetry deposited on RuO2 electrodes. As the Ti content of the PZT films increased, the film gain morphology changed from columnar to granular and the volume percent of a fluorite-type second phase decreased. These microstructural trends and the possibility that the electrode material acts as a sink for oxygen vacancies are discussed to explain the fatigue dependence on B-site cation ratio for PZT films with RuO2 electrodes. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360888
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  • 3
    Digitale Medien
    Digitale Medien
    Electrical properties of ferroelectric thin-film capacitors with hybrid (Pt,RuO2) electrodes for nonvolatile memory applications (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2146-2154 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: For Pb(ZrxTi1−x)O3 (PZT) thin-film capacitors to be used in ferroelectric nonvolatile memories, they must have low polarization fatigue and low leakage currents. PZT capacitors fabricated in our laboratory with RuO2 electrodes exhibit excellent polarization fatigue characteristics, but they have large and variable leakage currents (typically 10−3–10−4 A/cm2 at 1 V). On the other hand, PZT capacitors with Pt electrodes have low leakage currents (typically 〈10−9 A/cm2 at 1 V), but they undergo severe polarization fatigue. New (Pt,RuO2) hybrid electrodes which result in PZT capacitors that combine the excellent fatigue behavior of RuO2/PZT/RuO2 with the low leakage currents of Pt/PZT/Pt capacitors have been developed. The hybrid electrodes studied are of two main types: one type consisted of Pt/RuO2 or RuO2/Pt double layers, while the other consisted of a codeposited Pt–RuO2 layer. All capacitors discussed here had an RuO2/PZT/hybrid electrode/MgO heterostructure. It will be shown that capacitors with negligible fatigue (up to 1011 switching cycles) and with leakage currents that are two to four orders of magnitude lower than those of RuO2/PZT/RuO2 capacitors can be achieved. In addition, the capacitors with hybrid electrodes have very small retention loss. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359572
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  • 4
    Digitale Medien
    Digitale Medien
    Photoinduced changes in the fatigue behavior of SrBi2Ta2O9 and Pb(Zr,Ti)O3 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1682-1687 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is shown that SrBi2Ta2O9 (SBT) thin films can be made to exhibit significant polarization fatigue by electric-field cycling under broad-band, optical illumination. Photoinduced fatigue is also observed for Pb(Zr,Ti)O3 (PZT) thin-film capacitors with (La,Sr)CoO3 (LSCO) electrodes. These results demonstrate that both the Pt/SBT/Pt and the LSCO/PZT/LSCO systems are susceptible to fatigue effects, which are attributed primarily to pinning of domain walls due to charge trapping. Capacitors that have been fatigued under illumination can be fully rejuvinated by applying a dc saturating bias with light or by electric-field cycling without light, which indicates an intrinsic, field-assisted recovery mechanism. We suggest that fatigue is essentially a competition between domain wall pinning and unpinning and that domain pinning is not necessarily absent in these nominally fatigue-free systems, but rather these systems are ones in which unpinning occurs at least as rapidly as any pinning. In both cases, the extent of photoinduced fatigue decreases with increased cycling voltage, indicating the relative importance of field-assisted unpinning. Finally, the observation of photoinduced fatigue implies that increased injection rates, potentially due to oxygen vacancy accumulation, may account for the electrode dependence on fatigue in PZT thin films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362968
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  • 5
    Digitale Medien
    Digitale Medien
    Driving force behind voltage shifts in ferroelectric materials (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1681-1683 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: By systematically poling Pb(Zr,Ti)O3 capacitors to different extents, we observe a linear relationship between the remanent polarization and the magnitude of voltage offsets in the hysteresis curve. This result directly shows that the polarization is the impetus behind voltage shifts and, thus, imprint in ferroelectric capacitors. It is proposed that the increased polarization lowers the electrostatic potential well for the trapping of electrons thereby leading to greater voltage shifts. We also find that the remanent polarization and defect occupancy are temperature dependent which collectively impact the observed voltage offsets measured at elevated temperature. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115904
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  • 6
    Digitale Medien
    Digitale Medien
    Influence of platinum interlayers on the electrical properties of RuO2/Pb(Zr0.53Ti0.47)O3/RuO2 capacitor heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 239-241 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Lead zirconate titanate, Pb(ZrxTi1−x)O3 or PZT, thin films grown on RuO2 electrodes by the sol-gel process have excellent resistance to polarization fatigue, but they generally have two drawbacks. The films have high leakage currents and large property variation. In this letter we show that the use of a thin Pt layer (100 A(ring)) deposited on the bottom RuO2 electrode to fabricate RuO2/PZT/Pt/RuO2/(100)MgO capacitors has two important effects. It reduces capacitor leakage by two to four orders of magnitude and it significantly reduces the large property variation. In addition, these capacitors retain their excellent resistance to polarization fatigue which is characteristic of the RuO2/PZT/RuO2 heterostructure. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113558
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  • 7
    Digitale Medien
    Digitale Medien
    Low temperature processing of Nb-doped Pb(Zr,Ti)O3 capacitors with La0.5Sr0.5CoO3 electrodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 272-274 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of crystallization temperature on the electrical properties of sol-gel derived Pb(Zr,Ti,Nb)O3 or PNZT capacitors with La0.5Sr0.5CoO3 (LSCO) electrodes has been investigated. It is demonstrated that LSCO//PNZT(4/30/70)//LSCO capacitors can be fabricated at temperatures as low as 550 °C without significant degradation in their ferroelectric and dielectric properties. Lowering the process temperature to 500 °C resulted in substantial degradation in capacitor properties. Nonetheless, all capacitors processed in the 500 °C to 675 °C range exhibited essentially no fatigue up to 5×109 switching cycles. The low temperature processing is significant as it indicates that this ferroelectric capacitor technology is compatible with high density nonvolatile memory architectures. In other words, these process temperatures are low enough to maintain plug integrity and to prevent degradation of the underlying CMOS circuitry in a high density ferroelectric memory. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115660
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  • 8
    Digitale Medien
    Digitale Medien
    Qualitative model for the fatigue-free behavior of SrBi2Ta2O9 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 690-692 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: SrBi2Ta2O9 (SBT) thin films are known to exhibit no polarization fatigue with electric field cycling. However, we have discovered that optical illumination combined with a bias voltage near the switching threshold can result in significant ((approximately-greater-than)90%) suppression of the switchable polarization of SBT thin film capacitors. A similar effect has also been reported for Pb(ZrxTi1−x)O3 (PZT) capacitors. However, it is found that electric field cycling of the optically fatigued SBT capacitors results in near-complete recovery of the suppressed polarization. In contrast, electric field cycling of optically fatigued PZT capacitors does not result in any polarization recovery. These results suggest that optical fatigue in both SBT and PZT capacitors results from pinning of domain walls due to trapping of the photogenerated carriers at domain boundaries, whereas the recovery exhibited by SBT thin films indicates that the domain walls are more weakly pinned in SBT than in PZT thin films. Consequently, the fatigue-free behavior of SBT thin films during electric field cycling can be viewed as a competition between domain wall pinning due to charge trapping and domain wall unpinning by the cycling field; the latter process occurring at least as rapidly as the former. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116593
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  • 9
    Digitale Medien
    Digitale Medien
    Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3875-3877 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1379363
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  • 10
    Digitale Medien
    Digitale Medien
    A new and rapid process for production of solution-derived (Pb, La)(Zr, Ti)O3 thin films and powders (1997)
    Springer
    Journal of materials science 32 (1997), S. 2263-2266 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract A simple and rapid process for synthesizing (Pb,La)(Zr,Ti)O3 (PZT, PLZT, and PLT) precursor solutions has been developed. This process, termed the “basic route to PLZT” (or BRP) process, offers several advantages over standard methods, including rapid solution synthesis (〈10 min), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations (〈1 min), and no heating requirements during solution synthesis. The PLZT precursor solution synthesis involves dissolution of lead acetate (or acetyl acetate) in pyridine followed by addition of a pre-dissolved mixture of titanium and zirconium iso-propoxide in toluene. The lanthanum source can then be added and, depending on the precursor, total synthesis time was 〈10 min. The preferred lanthanum starting material is a highly soluble bis(iso-propyl)aryloxide complex; however, this compound is extremely air and water sensitive. The compositions investigated in this study include PZT 40/60, PLZT 3/30/70, 5/30/70, and 10/40/60, and PLT films with 10–20 mol % La. All films were crystallized at 650 19°C and exhibit ferroelectric properties comparable to films produced by other techniques which require higher crystallization temperatures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1018520132376
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