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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three large-area YBa2Cu3O7(YBCO) superconducting thin films have been laser-deposited under almost identical conditions. However, the microwave surface resistance Rs of the films deviated greatly, they are 280 μΩ, 3.78 mΩ, and 97 mΩ, respectively. It was found that the structure and morphology of the films greatly influence the resistive losses at 10 GHz and 77 K of the YBCO thin films. Different loss mechanisms were discussed. For high Rs, the large angle grain boundaries were the dominate defect in the thin films and increased the Rs of the film markedly. For low Rs, it was mainly due to the misaligned "123'' grains in the thin films and the intrinsic loss. For Rs up to the mΩ range, besides the misaligned 123 grains, domain boundaries and nonsuperconducting outgrowths of different sizes appeared and this caused the rise of Rs value. All these results were given experimentally and discussed theoretically. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 900-907 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth of Pt and Ni films deposited on amorphous carbon (a-C) substrates by ion-beam sputtering (IBS) have been followed from an early stage through to complete substrate coverage. The influence of IBS parameters and substrate temperature Ts on deposition rate and metal particle (island) size distributions have been measured. Metal island growth is shown to be predominantly two dimensional in character. Soft-x-ray reflectivity measurements on Ni/a-C multilayers detect the single atom layer increments in Ni island thickness tNi' during growth from the initial (critical) value tNi' = 0.87 nm which is consistent with a theoretical 22 atom cluster model. The influence of the metal island growth stages on the soft-x-ray reflectivity of multilayer mirrors is considered.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 10727-10731 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The negative ion photoelectron spectra of As−, As2−, As3−, As4−, and As5− have been measured. From these, the electron affinities of As, As2, As3, As4, and As5 have been determined to be 0.814, 0.739, 1.45, 〈0.8, and ∼1.7 eV, respectively. In the case of As2−, the following molecular constants were also determined: re(As2−)=2.239 Å, ωe(As2−)=293 cm−1, ωeχe(As2−)=4.9 cm−1, D0(As2−)=3.89 eV, and ΔE[2Πg(3/2)−2Πg(1/2)]=0.256 eV. In the case of As3−, vertical detachment energy (VDE) was measured to be 1.62 eV, and for As3, ΔE(2A2−2B1) was determined to be 0.36 eV. For As4−, VDE was found to be 1.52 eV. The relatively high stability of As5− suggests that it, like P5−, may be a candidate for forming cluster-assembled, ionic crystals of stoichiometry, MAs5, where M is an alkali metal atom. Similiarities with other small cluster anions of Group V elements are also discussed. © 1998 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 9263-9265 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The negative ion photoelectron spectrum of AsO− has been measured, assigned, and analyzed. The adiabatic electron affinity, EAa, was determined directly from the photoelectron spectrum. The dissociation energy of AsO−, D0(AsO−), was computed via an energetic cycle using our measured value of EAa and existing literature values for other necessary quantities. Franck–Condon analysis provided values for the bond length of the AsO− anion, re(AsO−), its vibrational frequency, ωe(AsO−), and its anharmonicity constant, ωeχe(AsO−). The values of the molecular constants which were determined in this work are: EAa(AsO)=1.286±0.008 eV, D0(AsO−)=4.74±0.08eV, re(AsO−)=1.696±0.010 Å, ωe(AsO−)=827±40 cm−1, and ωeχe(AsO−)=5.54 cm−1. In addition, we determined the X 3Σ−−a1Δ, ground-to-first excited state splitting in AsO− to be ∼0.54 eV. © 1998 American Institute of Physics.
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  • 5
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2673-2676 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A π/2 and 5π/2 twist bistable nematic liquid crystal cell is optimized in optics by a parameter space approach. The cell possesses good contrast ratio, a preferable dΔn value, a wide viewing angle, and black–white display. Three switching wave forms can be used to switch the cell between π/2 and 5π/2 twist states. Controlling the selection voltage amplitude can provide gray scales for the cell. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2373-2376 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contrast ratio of reflective bistable twisted nematic displays are optimized by means of a parameter space approach. By plotting the contrast ratio as a function of the twist angle and thickness-birefringence product of the display, the regions where the display shows the best contrast ratio are clearly shown. Both the absolute reflectance and wavelength dispersion of two bistable twisted states are investigated. It is confirmed that high contrast ratio of over 100 and reflectance of 100% with polarized light input are possible for such reflectance bistable displays. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1506-1508 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A hard x-ray Fresnel zone-plate-based microprobe has been designed and integrated into a Newport kappa diffractometer for microdiffraction studies at the 2ID-D beamline at the Advance Photon Source. The microprobe employs 10 and 40 cm (focal length at 8 keV) zone plates to provide high and moderate focusing power, respectively. Each zone-plate assembly has two identical zone plates stacked together to provide higher focusing efficiency for higher energy (30 keV) applications. The mounting base of the microprobe is supported by the side of the base of the diffractometer at one end and the central table of the diffractometer at the other end, thus minimizing the instability of relative positions between the focal spot and the specimen. A x-ray focal spot size smaller than 360 nm and angular repeatability of the sample circles smaller than 0.001° have been demonstrated with this setup. © 2002 American Institute of Physics.
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A grazing incidence spherical grating monochromator (SGM) for photoelectron spectroscopy has been set up in NSRL. It covers the energy range 10–1000 eV. The primary results of commissioning and operation of the beamline have been described. The resolution power could be obtained from 500 to 1000 (E/ΔE) with 50 μm of slit opening in a wide range of photon energy. The improvement of the beamline performance is continuing. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1809-1811 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A vacuum system for the insertion devices at the advanced photon source was designed; a prototype of this system was manufactured and successfully tested. The system consists of two vacuum chamber sections with distributed vacuum pumps, two boxes containing the vacuum pumps, vacuum analyzers and special transition sections, and finally two support structure sections. The vacuum chambers are made of extruded aluminum. The wall thickness of the insertion-device vacuum chamber section is 1 mm in the area of the insertion device's magnetic gap on the length of 2.4 m. An ultimate pressure of 5.1×10−11 Torr was achieved in the prototype, which contains the insertion device vacuum chamber section with a 12-mm vertical aperture. © 1995 American Institute of Physics.
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