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  • 1
    Electronic Resource
    Electronic Resource
    Boron pileup and clustering in silicon-on-insulator films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dopant-defect interaction in silicon-on-insulator (SOI) material is studied for Si film thicknesses ranging from 60 to 274 nm, with regards to (1) boron pileup and (2) defect-induced boron clustering. Results are obtained on boron-implanted samples and on molecular beam epitaxy-grown deposited-boron samples. The experimental results verify simulations predicting (a) boron pileup at both upper and lower interfaces of the Si film, and (b) no reduction of the boron clustering in SOI compared with bulk silicon. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124604
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  • 2
    Electronic Resource
    Electronic Resource
    Activation and deactivation of implanted B in Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 662-664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal evolution of the electrically active B fraction has been measured experimentally on B implanted Si, and calculated using atomistic simulation. An implant of 40 keV, 2×1014 cm−2 B was examined during a postimplant anneal at 800 °C. The results show a low B activation (∼25%) for short anneal times (≤10 s) that slowly increases with time (up to 40% at 1000 s), in agreement with the model proposed by Pelaz et al. [Appl. Phys. Lett. 74, 3657 (1999)]. Based on the results, we conclude that B clustering occurs in the presence of a high interstitial concentration, in the very early stages of the anneal. For this reason, B clustering is not avoided by a short or low-temperature anneal. The total dissolution of B clusters involves thermally generated Si interstitials, and therefore, requires long- or high-temperature anneals. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124474
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  • 3
    Electronic Resource
    Electronic Resource
    Comment on "Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)] (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 151-152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126906
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  • 4
    Electronic Resource
    Electronic Resource
    Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2017-2019 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomistic simulations are used to study the effects of implant parameters on transient enhanced diffusion (TED). We analyze 10 keV Si implants in a wide range of doses from 108 to 1014 ions/cm2, dose rates from 1010 to 1014 ions/cm2 s, and implant temperature from room temperature to 1000 °C. Different regimes with different dependence of TED on these parameters are observed. For high doses, high dose rates, and low implant temperatures, the Frenkel pairs are accumulated during ion implantation, and the resulting damage is very dense. During the postimplant annealing, the recombination of Frenkel pairs is efficient, and the extra interstitials generated by the implanted ions provide the main contribution to the enhanced diffusivity. For low doses, low dose rates, and high implant temperatures, there is little interaction between neighboring cascades during annealing. The recombination of Frenkel pairs is not complete, and many interstitials and vacancies from each cascade survive recombination and contribute significantly to TED. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123742
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  • 5
    Electronic Resource
    Electronic Resource
    Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2980-2982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes advantage of the fact that metal impurities, such as Au, are trapped in the region of excess vacancies produced by MeV Si implants into silicon. In this work, the clustered-vacancy regions produced by 1-, 2-, and 8-MeV Si implants into silicon have been labeled with Au diffused in from the front surface at 750 °C. The trapped Au was profiled with Rutherford backscattering spectrometry. The dynamics of the clustered-vacancy region were monitored for isochronal annealing at 750–1000 °C, and for isothermal annealing at 950 °C, for 10–600 s. Cross-sectional transmission electron microscopy analysis revealed that after the drive-in anneal, the Au in the region of vacancy clusters is in the form of precipitates. The results demonstrate that the Au-labeling technique offers a convenient and potentially quantitative tool for depth profiling vacancies in clusters. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122650
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  • 6
    Electronic Resource
    Electronic Resource
    Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1086-1088 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the process of thin film separation by gas ion implantation and wafer bonding, as well as the more basic phenomenon of blistering, on which the technique is based. We show that when H and He gas implants are combined they produce a synergistic effect which enables thin-film separation at a much lower total implantation dose than that required for either H or He alone. By varying the H and He implantation doses we have been able to isolate the physical and chemical contributions of the gases to the blistering processes. We find that the essential role of H is to interact chemically with the implantation damage and create H-stabilized platelet-like defects, or microvoids. The efficiency of H in this action is linked to its effective lowering of the silicon internal surface energy. The second key component of the process is physical; it consists of diffusion of gas into the microvoids and gas expansion during annealing, which drives growth and the eventual intersection of the microvoids to form two continuous separable surfaces. He is more efficient than H for this process since He does not become chemically trapped at broken bonds and thus segregates into microvoids more readily. In particular, we have demonstrated that a 1×1016 cm−2 He dose in combination with a 7.5×1015 cm−2 H dose are sufficient to shear and transfer a thin silicon film onto a handle wafer after bonding the two wafers together. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120945
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1299-1301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123530
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  • 8
    Electronic Resource
    Electronic Resource
    Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1273-1275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the evolution of the excess-vacancy region created by a 2 MeV, 1016/cm2 Si implant in the silicon surface layer of silicon-on-insulator substrates. Free vacancy supersaturations were measured with Sb dopant diffusion markers during postimplant annealing at 700, 800, and 900 °C, while vacancy clusters were detected by Au labeling. We demonstrate that a large free vacancy supersaturation exists for short times, during the very early stages of annealing between the surface and the buried oxide (1 μm below). Afterwards, the free vacancy concentration returns to equilibrium in the presence of vacancy clusters. These vacancy clusters form at low temperatures and are stable to high temperatures, i.e., they have a low formation energy and high binding energy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385192
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  • 9
    Electronic Resource
    Electronic Resource
    Depth dependence of {311} defect dissolution (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1429-1431 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep band of {311} defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 °C, 1000 s). Chemical etching was used to vary the depth to the surface of the {311}-defect band. Afterwards, the defect dissolution was investigated at 750 °C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The {311} defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the {311}-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392972
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  • 10
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    Comment on “Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon” [Appl. Phys. Lett. 75, 1279 (1999)] (2000)
    American Institute of Physics
    Details
    Publication Date: 2000-07-03
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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