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  • 1
    Electronic Resource
    Electronic Resource
    Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1902-1906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The zinc concentration measured after organometallic vapor phase epitaxy (OMVPE) growth on (100)-oriented GaAs at 700 °C has been compared to the zinc concentration measured after in-diffusion under near-equilibrium conditions. During diffusion, the concentration of Zn 20 nm below the surface was found to vary with P1/2Zn, as expected for bulk solid–vapor equilibrium. During growth, the concentration of Zn varied linearly with PZn up to a maximum value which was found to correspond to the solubility limit set by second phase formation, e.g., growth of Zn3As2. Although large differences were observed between the results of the two experiments when using nominally identical ambient conditions, all of the results are consistent with a thermodynamic model in which the Fermi level at the surface is pinned approximately 200 meV below the intrinsic Fermi level. Typical OMVPE growth conditions appear to give a bulk zinc concentration which is supersaturated relative to the ambient partial pressures used, and to enhance the diffusion of Zn into the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358821
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  • 2
    Electronic Resource
    Electronic Resource
    Transient enhanced diffusion without {311} defects in low energy B+-implanted silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2025-2027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy and low dose B+-implanted Si has been studied using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). Czochralski-grown (100) Si wafers were implanted with 4 keV B+ to a dose of 1×1014/cm2. Subsequently, anneals were performed between 700 and 800 °C for times between 15 s and 8 h in an ambient atmosphere of N2. SIMS results show transient enhanced diffusion (TED) of the boron that saturates in less than 15 min for all annealing temperatures studied. TED results in an increase in the junction depth by at least 60 nm at a 1×1016/cm3 concentration. TEM studies show that, even for the shortest times before TED is observed, {311} defects are not detected. These results imply that there may be more than one source of interstitials for TED. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114775
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  • 3
    Electronic Resource
    Electronic Resource
    Unintentional indium incorporation in GaAs grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2321-2323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have quantified unintentional indium incorporation in GaAs grown by molecular beam epitaxy in a variety of commercial systems. We find that the unintentional indium density in the epitaxial GaAs is more a function of mounting technique and prior machine history than of the manufacturer's design. The indium densities detected in the epitaxial GaAs for substrates that only partially obscure an indium-bearing mount are equal to levels reported to result in minimum defect densities and narrowest photoluminescence linewidths in In-doped GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103881
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion of ion implanted boron in preamorphized silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2672-2674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A comparison of 4 keV, 1× 1014/cm2 boron implants into crystalline and Ge+ preamorphized silicon was undertaken. Upon annealing the B+ implant into crystalline material exhibited the well-known transient enhanced diffusion (TED). In this case the peak of the boron distribution was relatively immobile and only B in the tail showed TED. In the second set of samples, the surface was first preamorphized by a 180 keV, 1×1015/cm2 Ge+ implant which produced an amorphous layer 2300 A(ring) deep, which then was implanted with boron. After implantation the tail of the B distribution extended to only 700 A(ring). Upon annealing, TED of the boron in the regrown Si was also observed, but the diffusion profile was very different. In this case the peak showed no clustering, so the entire profile diffused. The time for the TED to decay was around 15 min at 800 °C. TEM results indicate that the (311) defects in the end of range damage finish dissolving between 10 and 60 min at 800 °C. These results indicate that for these Ge preamorphization conditions, not only do the end of range defects not block the flow of interstitials into the regrown silicon, the (311) defects in the end of range damage act as the source of interstitials. In addition, boron does not appear to cluster in regrown silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116277
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  • 5
    Electronic Resource
    Electronic Resource
    Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1381-1383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy, depth profiling with secondary ion mass spectrometry, and conductivity measurements have been performed on Sb-doped Si(100) films grown at low temperature (350 °C) by molecular beam epitaxy. The measurements reveal two important effects: (1) a significant increase in the surface segregation of Sb as the dopant concentration approaches 1×1020 cm−3, and (2) a decrease in surface segregation as the surface concentration of Sb reaches one monolayer. We believe that the presence of this monolayer of Sb is responsible for the surface segregation becoming self-limited and the associated bulk concentration exceeding 1×1020 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109683
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced Zn diffusion in GaAs pnpn structures: Growth versus annealing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1402-1404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn diffusivity, DZn in heavily doped pnpn GaAs structures has been measured after growth and annealing. During growth at 650 °C, DZn∼10−12 cm2/s in the buried p-type layer is found to be (approximately-greater-than)104×DZn in the top p-type layer. During annealing at 800 °C, DZn≈5×10−14 cm2/s in the buried layer remains orders of magnitude larger than DZn in the top layer. The measurements provide clear experimental evidence that (1) a large flux of Ga interstitials, IGa, is injected from the surface during the growth of n-type layers, (2) the IGa are trapped in the buried p-type layer by the electric field of the pn junctions, and are thus positively charged, (3) the resulting large concentration of IGa in the buried layer accounts for the enhanced DZn via a kick-out mechanism, and (4) the mobile Zn interstitial is positively charged. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114507
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  • 7
    Electronic Resource
    Electronic Resource
    Direct laboratory determination of the 187 Re half-life (1986)
    [s.l.] : Nature Publishing Group
    Nature 320 (1986), S. 246-248 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Geochemists1 and astrophysicists2 have recognized that the isobaric pair 187Re-187Os could provide terrestrial, Solar System and cosmic chronologies. For these, the 187Re half-life is a necessary parameter. Recent determinations, which indicate a probable value of 4xl010yr, rely on accepted ages ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/320246a0
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  • 8
    Electronic Resource
    Electronic Resource
    Instrumental Neutron Activation Analysis for Certification of Ion-Implanted Arsenic in Silicon (2000)
    Springer
    Journal of radioanalytical and nuclear chemistry 245 (2000), S. 57-63 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Standard reference material (SRM) 2134 Arsenic Implant in Silicon was produced at the National Institute of Standards and Technology (NIST) as a calibrant for secondary ion mass spectrometry. Instrumental neutron activation analysis was used as a primary method for certification of the arsenic implanted dose. A complete evaluation of all sources of uncertainty yielded an expanded relative uncertainty for the mean value of this SRM to be 0.38% at approximately the 95% level of confidence. No evidence indicating significant heterogeneity among samples was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006703131599
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  • 9
    Electronic Resource
    Electronic Resource
    Laser desorption mass spectrometry of squaric acid and its salts (1986)
    Chichester : Wiley-Blackwell
    Biological Mass Spectrometry 21 (1986), S. 63-68 
    Details
    ISSN: 0030-493X
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The laser desorption mass spectrometry of the oxocarbon squaric acid (3,4-dihydroxy-3-cyclobutene-1,2-dione) and its salts of the form A2C4O4 (A = cation) is described. Both positive and negative ion spectra were obtained. The positive ion spectrum of the acid is characterized by an ion corresponding to loss of CO from [M + H]+. The negative ion spectrum shows an intense [M - H]- peak in addition to a dimer species. The alkali salt spectra contain [M + A]+ in the positive mode and [M - A]- and an intense [C4HO4]- in the negative mode. The smaller alkali salts also have an [M + H]+ adduct ion. Unlike the alkali squarates, the ammonium salt shows ions corresponding to losses of neutrals from the molecular adduct in the positive ion spectrum and a dimer species in the negative ion spectrum. Molecular weight information was obtained in all cases. A (bis) dicyanomethylene derivative of potassium squarate was also studied. Some field desorption mass spectrometry results are presented for comparison.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/oms.1210210204
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  • 10
    Electronic Resource
    Electronic Resource
    Quantitative analysis of impurities in SIMOX samples using secondary ion mass spectrometryThis work was sponsored in part by the Defense Nuclear Agency under Contract DNA IACRO 88-816. (1991)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 17 (1991), S. 57-61 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Silicon films produced by the SIMOX process (separation by implanted oxygen) must be annealed at high temperature to remove the crystal damage introduced during implantation of the high oxygen dose. Different annealing gases, temperatures and times have been investigated. In such processes, various impurities present in the hightemperature ceramic furnace tube, as well as annealing gas species, may be incorporated into the samples. Secondary ion mass spectrometry (SIMS) is used as a quantitiative tool to analyze the diffusion of tube components and gases into annealed SIMOX samples. Samples. Samples prepared for this investigation were annealed in nitrogen and argon at temperatures ranging from 1250 to 1350 °C. We found that most impurities are present at low levels and are generally trapped in the surface oxide that is grown during the anneal. SIMS analyses of SIMOX samples annealed in nitrogen showed that nitrogen tends to collect in both the surface oxide band buried oxide layers, piling up at the oxide/silicon interfaces.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740170113
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