Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 932-934
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
AlSb and AlAsxSb1−x epitaxial films grown by metalorganic chemical vapor deposition were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500 ° C and 76 Torr using trimethylamine alane and triethylantimony. AlAs0.16Sb0.84 films lattice matched to InAs were grown at 600 ° C and 76 Torr by adding arsine. Secondary ion mass spectroscopy showed C and O levels below 2×1018 and 6×1018 cm−3, respectively, for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn-doped AlAs0.16Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between 1×1017 to 5×1018 cm−3 for Zn-doped material and electron concentrations in the low to mid- 1018 cm−3 for Sn-doped material. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116235
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