ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 2024-2027 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: B3LYP and CCSD(T) (single-point) calculations are performed on structures and interconversion transition states for five C2N2 isomers, i.e., the linear structures NCCN 1, CNCN 2, CNNC 3, and CCNN 4, and the NNC three-membered ring structure with exocyclic C–C bonding 5. A schematic potential-energy surface of the five C2N2 isomers is established. It is shown that the elusive and long searched for isomer 3 lies in a deep potential well against isomerization to the well-studied isomers 1 and 2, while the two transition states, which have been predicted to connect the isomers 1 and 3, are actually associated with the interexchange of the two cyano groups in isomer 2. It is also shown that the experimentally unknown but expectedly important isomer 4 may take an isomerization pathway to the isomer 1 via the intermediate 5, and the isomer 4 also lies in a deep potential well. Both the isomers 3 and 4 may be thermally as stable as the isomer 2. The results presented in this paper may provide useful information for the identification of the two isomers 3 and 4. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2764-2766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2043-2045 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of the Raman spectra of ZnSe films grown by molecular beam epitaxy on GaAs(100) substrates passivated by NH4)2)Sx and S2Cl2 solutions is presented. Based on the analysis of the line shape of the first-order longitudinal-optical phonon of ZnSe with spatial correlation model of Raman scattering, it is shown that the ZnSe films grown on the GaAs substrates passivated by S2Cl2 solutions have longer coherence lengths, which indicate that their crystalline qualities are better than those passivated by NH4)2Sx solutions. In addition, the barrier heights of ZnSe/GaAs interfaces for different S passivations have been obtained from the ratios of the intensity of the coupled longitudinal-optical phonon-plasmon mode to that of the longitudinal-optical mode of GaAs Raman peak. The results show that the ZnSe/GaAs samples passivated by S2Cl2 solutions have lower density of interfacial states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 36 (1995), S. 1177-1191 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: By means of symplectic group Sp(2M), the symplectic symmetry of the Hubbard model and the η pairing are investigated to approach the eigenstates which have the largest spin multiplicities. The behavior of the off-diagonal long-range order of these eigenstates is examined by the criterion proposed by Yang and the energy diagram of the corresponding eigenvalues is elucidated by the η pairing mechanism. A basis set which is expressible in terms of η and ηa pairings is proposed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3081-3083 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2252-2254 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation. The photoemission core level spectra show that the surface Ga and As atoms are bonded to S atoms to form a thick sulfurized layer. No oxygen uptakes on the sulfurized GaAs surface as illustrated by the high resolution electron energy loss spectroscopy. The results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3425-3427 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new sulfur passivation method—S2Cl2 treatment, which is quite effective for removing the surface oxide layer of GaAs and passivating the surface with monolayer thick sulfides. Photoluminescence (PL) spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS) are used to study the passivated GaAs (100) surfaces. The results of PL reveal that the PL intensity increases by two orders of magnitude, which is indicative of the reduction of surface recombination velocity of GaAs by this treatment. AES data prove that the sulfurized surface contains S, Ga, As, C, and small amount of Cl atoms but no oxygen signal at all. XPS study shows that sulfur atoms bond to both Ga and As atoms more effectively on S2Cl2 treated surfaces than those passivated by (NH4)2Sx.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 28 (1995), S. 2738-2744 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 25 (2002), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: China's soils tend to be phosphate deficient. Application of phosphorus fertilisers to the soil is yield and cost ineffective as much of the phosphate applied is rapidly locked-in and is inaccessible to the crop. Chinese Institutes have established intensive wheat breeding programmes to generate wheat varieties that produce adequate yields and grain quality in such soils. Three such wheat cultivars have been identified with good performance characteristics in the field. These three cultivars are thought to harbour chromosome translocations that may confer enhanced phosphate scavenging abilities to the plants. The isolation and study of the expression of high-affinity phosphate transporters in tissues of these wheats, in two of the donor wheatgrasses and in another widely planted Chinese wheat variety is presented and the first full-length sequence of a wheat phosphate transporter and partial clones of several other putative phosphate transporters are reported. Relative quantitative reverse-transcription – polymerase chain-reaction was used to demonstrate that different phosphate transporters have different expression patterns within a given variety and respond differently to phosphate deprivation. The significance of the genetic background for these findings and for the different phosphate acquisition properties of the wheats under study is discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    FEBS Letters 286 (1991), S. 117-120 
    ISSN: 0014-5793
    Keywords: Beta vulgaris L. ; Plant plasma membrane ; Reconstitution ; Sucrose ; Sugar transport
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...