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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3676-3681 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamical process of surface band bending induced by ion bombardment as a function of ion fluence and energy has been studied with a special low energy ion beam system and an x-ray photoelectron spectrometer. It was found that 10 and 100 eV Ar+ bombardment of n- and p-InP (110) samples, which were prepared in ultrahigh vacuum by in situ cleavage of InP (100) bars, moved their surface Fermi levels to a common pinning position 0.95 eV above the valence-band maximum. The observed surface band bending was attributed to the displacement damage in the near-surface region induced by the ion bombardment. A quantitative analysis of the band bending data as a function of ion fluence showed that for the 10 eV Ar+ bombardment the formation of ionized surface states at a density of about 1×1012/cm2 in the band gap of InP was induced by an ion fluence of 5×1016/cm2. As expected, an increase of bombardment energy from 10 to 100 eV greatly raised the formation probability of surface defects. The results imply that very brief plasma exposure is sufficient to cause surface damage to a semiconductor that is severe enough to affect the device performance of the semiconductor. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2227-2229 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic electroluminescent devices using SiO2 as a hole-injecting buffer have been fabricated. With the presence of the buffer, the luminance of the device reaches 1820 cd/m2 at the current density of 20 mA/cm2, which corresponds to an efficiency of 9.1 cd/A. The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hole transporting layer to the anode. © 1999 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Chemistry of materials 1 (1989), S. 375-380 
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Three near-isogenic lines (NILs) of wheat involving Glu-B1 and Glu-D1 alleles were used to study the genetic contribution of high molecular weight glutenin subunits (HMW-GS) to gluten strength. The HMW-GS composition of each NILs was determined by SDS-PAGE. No significant differences were found in grain protein contents among the NILs. Gluten strength and dough-mixing properties were measured by the Farinograph, the Extensograph, and SDS-sedimentation (SDS-SE). Results indicated that line 2, containing the Glu-1B 14 + 15 and Glu-1D 5 + 10 combination of subunits, had higher values for flour quality, dough rheological parameters, and bread-baking quality when compared with lines 8 and 13. Line 8, containing Glu-1B 7 + 9 and Glu-1D 5 + 10, was better than line 13 with the Glu-1B 14 + 15 and Glu-1D 10 combination. Some major parameters appeared significantly different. The presence of Glu-1B 14 + 15 was associated with higher dough strength based on SDS-SE volume and several rheological parameters when compared with Glu-1B 7 + 9. Lines with subunit 10 at Glu-D1 performed significantly worse than those with 5 + 10 in gluten index, SDS-SE volume, Farinograph stability time, Extensograph area and bread-baking quality.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 25 (1992), S. 2369-2380 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 25 (1992), S. 2739-2745 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 2413-2420 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We study nonlinear spectroscopy processes in a disordered system. A density expansion with respect to the equations of motion is developed. In low density limit we derive explicitly the reduced equations for zero-, one-, and two-body variables. Our reduced equations contain the information of the transport property of the disordered system. By solving these equations we obtain the steady state four-wave mixing spectrum of the disordered system and study its aspect.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 6678-6678 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 1725-1730 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report an observation of strong emission of CN− ions during heating of a nitrogen ion-irradiated graphite surface. An activation energy of 5.0±0.2 eV for thermionic CN− emission is derived from its temperature dependence. From the results of thermal desorption of neutral molecules and thermionic electron emission, it is proposed that the thermally induced CN− ions may originate from the dissociative negative ionization of desorbing C2N2 molecules on the surface via a thermionic electron attachment mechanism. This mechanism is supported by the dissociative negative ionization of the desorbed C2N2 molecules in the gas phase, as observed by negative ion RGA measurement. The large negative ionization cross section of C2N2 molecules at an electron energy of 0.8–0.9 eV, which also leads to the formation of CN− ions, is believed to be responsible for the CN− emission during heating of the nitrogen ion irradiated graphite. © 2002 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Molecular microbiology 12 (1994), S. 0 
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: The DNA of wild-type Streptomyces lividans 66 is degraded during electrophoresis in buffers containing traces of ferrous iron. S. lividans ZX1, a mutant selected for resistance to DNA degradation, simuiltaneously became sensitive to φHAU3, a wide-host-range temperate bacteriophage. A DNA fragment conferring φHAU3 resistance was cloned; it contains a phage resistance gene whose deduced amino acid sequence is similar to the phage λ Ea59 endonuclease. The S. lividansφHAU3 resistance does not seem to be a classical restriction-modification system, because no host-modified phages able to propagate on the wild-type strain could be isolated. The cloned fragment did not make the host DNA prone to degradation during electrophoresis, indicating that the two phenotypes are controlled by different genes which were deleted together from the chromosome of ZX1.
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