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  • 1
    Electronic Resource
    Electronic Resource
    Stoichiometry and thickness variation of YBa2Cu3O7−x in pulsed laser deposition with a shadow mask (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3461-3463 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of particulate species, typically seen in pulsed laser deposition can be eliminated by the deployment of a line-of-sight shadow technique. Since the technique uses the discrimination between ballistic and diffusive species, it is important to understand the lateral stoichiometry and thickness dependence under various deposition conditions. We present in this study the dependence of the lateral thickness and stoichiometry of YBa2Cu3O7−x deposited by a shadow mask pulsed laser technique on the background oxygen pressure and the shadow mask position from the target. We determined Y atoms to be limiting the lateral stoichiometric uniformity. Due to its diffusive nature, shadowed pulsed laser deposition also allowed us to improve the thickness uniformity across the wafer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119201
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  • 2
    Electronic Resource
    Electronic Resource
    High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2735-2737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO thin films with near perfect crystallinity have been grown epitaxially on sapphire (001) by pulsed laser deposition technique. The ω-rocking curve full width at half-maximum of the ZnO(002) peak for the films grown at 750 °C, oxygen pressure 10−5 Torr was 0.17°. The high degree of crystallinity was confirmed by ion channeling technique providing a minimum Rutherford backscattering yield of 2%–3% in the near-surface region (∼2000 Å). The atomic force microscopy revealed smooth hexagonal faceting of the ZnO films. It has been possible to deposit epitaxial AlN films of thickness 1000 Å on epi-ZnO/sapphire. Excellent crystalline properties of these epi-ZnO/sapphire heterostructures are, thus, promising for lattice-matched substrates for III–V nitride heteroepitaxy and optoelectronics devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119006
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 348-350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO thin films have been grown heteroepitaxially on epi-GaN/sapphire (0001) substrates. Rutherford backscattering spectroscopy, ion channeling, and high resolution transmission electron microscopy studies revealed high-quality epitaxial growth of ZnO on GaN with an atomically sharp interface. The x-ray diffraction and ion channeling measurements indicate near perfect alignment of the ZnO epilayers on GaN as compared to those grown directly on sapphire (0001). Low-temperature cathodoluminescence studies also indicate high optical quality of these films presumably due to the close lattice match and stacking order between ZnO and GaN. Lattice-matched epitaxy and good luminescence properties of ZnO/GaN heterostructures are thus promising for ultraviolet lasers. These heterostructures demonstrate the feasibility of integrating hybrid ZnO/GaN optoelectronic devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121830
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of epitaxial GaN films by pulsed laser deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 102-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High crystalline quality epitaxial GaN films with thicknesses 0.5–1.5 μm have been successfully grown directly on Al2O3(0001) substrate by pulsed laser deposition (PLD). For films grown at 950 °C, we obtained an x-ray diffraction rocking curve linewidth of 7 arc min. The ion channeling minimum yield in the near-surface region (∼2000 Å) for a 0.5 μm thick film was ∼3%–4% indicating a high degree of crystallinity. The optical absorption edge measured by UV-visible spectroscopy was sharp, and the band gap was found to be 3.4 eV. The crystalline properties of these PLD GaN films are comparable to those grown by metalorganic chemical vapor deposition and molecular beam epitaxy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119441
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  • 5
    Electronic Resource
    Electronic Resource
    Ion milling damage and regrowth of oxide substrates studied by ion channeling and atomic force microscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3098-3100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion milling on the surface crystallinity of the metal oxide substrates LaAlO3, SrTiO3, and NdGaO3 which are used for fabrication of high-Tc Josephson junctions and circuits. Ion channeling of the milled substrates reveals a damage-induced peak corresponding to a disordered layer of (approximate)60 Å at the surface. Annealing the substrates in oxygen ambient at various temperatures ranging from 600 to 1100 °C resulted in the regrowth of the damaged layer at the surface of the substrates as was indicated by the reduction in size of the surface peak observed in the channeled spectrum, as well as by formation of lattice steps as seen by atomic force microscopy. A significant reduction in the damage peak size and the formation of smooth completed lattice steps are seen only after annealing at temperatures ≥950 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119103
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  • 6
    Electronic Resource
    Electronic Resource
    Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3947-3949 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has been studied in the case of ZnO thin films grown on sapphire (0001) by pulsed-laser deposition. Results of Rutherford backscattering and ion channeling in conjunction with atomic force microscopy clearly indicate that the growth mode, degree of epitaxy, and the defect density strongly depend on the oxygen background pressure during growth. It is also found that the growth mode and the defects strongly influence the electron mobility, free-electron concentration, and the luminescence properties of the ZnO films. By tuning the oxygen pressure during the initial and the final growth stages, smooth and epitaxial ZnO films with high optical quality, high electron mobility, and low background carrier concentration have been obtained. The implication of these results towards the fabrication of superlattices and controlled n- and p-type doping is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125503
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  • 7
    Electronic Resource
    Electronic Resource
    Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1529-1531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the realization of wide band gap (5–6 eV), single-phase, metastable, and epitaxial MgxZn1−xO thin-film alloys grown on sapphire by pulsed laser deposition. We found that the composition, structure, and band gaps of the MgxZn1−xO thin-film alloys depend critically on the growth temperature. The structural transition from hexagonal to cubic phase has been observed for (Mg content greater than 50 at. %) (1≥x≥0.5) which can be achieved by growing the film alloys in the temperature range of 750 °C to room temperature. Interestingly, the increase of Mg content in the film has been found to be beneficial for the epitaxial growth at relatively low growth temperature in spite of a large lattice mismatch between sapphire and cubic MgZnO alloys. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456266
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  • 8
    Electronic Resource
    Electronic Resource
    Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2787-2789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of visible blind ultraviolet photodetectors based on MgxZn1−xO. Using pulsed laser deposition technique, Mg0.34Zn0.66O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates. The structural, electrical, and optical properties of epilayers were characterized using various techniques. Based on the Mg0.34Zn0.66O films, planar geometry photconductive type metal–semiconductor–metal photodetectors were fabricated. At a 5 V bias, a high responsivity of 1200 A/W was achieved at 308 nm, and the visible rejection (R308 nm/R400 nm) was more than four orders of magnitude. The 10%–90% rise and fall time were 8 ns and 1.4 μs, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368378
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  • 9
    Electronic Resource
    Electronic Resource
    Rapid Thermal Annealing of Oxide Electrodes for Nonvolatile Ferroelectric Memory Structures (1998)
    Springer
    Journal of electroceramics 2 (1998), S. 171-179 
    Details
    ISSN: 1573-8663
    Keywords: ferroelectric ; rapid thermal annealing ; conducting barriers ; oxidation resistance ; resistance ; oxide electronics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We report on the properties of a ferroelectric stack comprising (La0.5Sr0.5)CoO3 (LSCO)/Pb(Nb,Zr,Ti)O3 (PNZT)/LSCO deposited on 4 inch diameter platinized Si wafers (Pt/Ti/SiO2/Si). The LSCO electrodes were deposited at room temperature by pulsed laser ablation and the ferroelectric layer was deposited by the sol-gel technique. Rutherford backscattering was performed to confirm the uniformity in composition, thickness and stoichiometry of LSCO across the wafers. Conventional furnace or rapid thermal annealing was performed to crystallize the electrodes. The oxidation resistance of the conducting barrier layers, Pt/Ti, was found to be dependent on the annealing procedure adopted for the bottom electrode. In the case where the bottom LSCO was crystallized by rapid thermal annealing, Rutherford backscattering analysis and transmission electron microscopy studies revealed that there was no oxidation of the Pt/Ti conducting barrier composite. This is in contrast to the observations for in-situ deposition or conventional furnace annealing of the bottom electrode. The resistivity, coercive field and polarization of the ferroelectric stack were uniform across the 4-inch wafers. The ferroelectric capacitors showed no fatigue up to 1011 cycles and no imprint at 100°C. The ferroelectric properties were independent of the annealing procedure used for crystallizing the electrodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009922816030
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  • 10
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    Ion milling damage and regrowth of oxide substrates studied by ion channeling and atomic force microscopy (1997)
    American Institute of Physics
    Details
    Publication Date: 1997-06-09
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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