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  • 1
    Electronic Resource
    Electronic Resource
    Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4382-4385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(001) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of γ-FeSi2, α-FeSi2, and β-FeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the γ-α and α-β phase transitions were determined as ≈11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359842
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature iron-nitride phase transformations induced by ion bombardment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3127-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that for the Fe–N system the combined use of ion irradiation and thermal annealing can lower the temperature for a given phase transformation. By Ar bombarding N-implanted Fe samples at 250 and 300 °C, we have induced the ε-Fe2N⇒ε-Fe2+xN+ε-Fe3.2N and the ε-Fe2N⇒ε-Fe3N+γ′-Fe4N phase transformations, respectively. These temperatures are 50 °C lower than the ones needed to produce the same transformations by thermal annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363825
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  • 3
    Electronic Resource
    Electronic Resource
    Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001). Study of their properties and thermal behavior (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 752-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of FeSi2 silicides was studied by using ion-beam epitaxial crystallization (IBIEC) of Fe-implanted Si(001) samples. By employing Rutherford backscattering/channeling spectrometry and transmission electron microscopy it was possible to determine that the IBIEC process produces a γ-, α-, and β-FeSi2 phase sequence, with increasing Fe concentration along the implantation profile. The critical concentrations for γ→α and α→β phase transitions are 11 and 21 at. %, respectively. A study of the thermal behavior of these phases shows that the γ- and α-FeSi2 are metastable with respect to the β-FeSi2 phase. The γ to β-FeSi2 transition starts at 700 °C via an Ostwald ripening process. In addition a 800 °C, 1 h anneal of high Fe concentration samples produces a complete α and γ to β-FeSi2 transformation. Finally, it is demonstrated that a regular or a rapid thermal annealing on Fe-implanted Si samples induces only the formation of a β-FeSi2 phase. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360821
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  • 4
    Electronic Resource
    Electronic Resource
    Range measurements and thermal stability study of AZ111 photoresist implanted with Bi ions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2502-2506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Rutherford backscattering technique has been used to determine the range parameters of Bi ions implanted into AZ111 photoresist film at energies from 10 to 400 keV. An overall good agreement is found between the experimental results and the theoretical predictions by Biersack, Ziegler, and Littmark. It is also observed that a variation in the implantation dose does not affect the projected range and range straggling results, despite the fact that chemical modification of the implanted polymer layer is detected. In addition, we find that a shallow implantation of the polymer film with Bi ions increases the temperature at which the photoresist starts to decompose. Finally, at 300 °C the implanted Bi atoms diffuse preferentially toward the bulk. For this temperature, two different diffusion coefficients are estimated, one for the damaged region Dd=1.2×10−5 cm2/s and another for the bulk Db=1.2×10−14 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341029
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  • 5
    Electronic Resource
    Electronic Resource
    Mass and energy dependence of implanted ion profiles in the AZ111 photoresist (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1322-1324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Profiles of Bi, Xe, Sn, Kr, Ga, Fe, K, Ar, P, Na, and F implanted into the AZ111 photoresist are compared with recent theoretical predictions. With the exception of the noble gases and F, the experimental results are well fitted by the Biersack–Haggmark [Nucl. Instrum. Methods 174, 257 (1980)] Monte Carlo calculations. For the noble gases we obtain ranges up to a factor of 2 shorter than the above predictions. Fluor changes the profile as function of energy, being nearly Gaussian at 30 keV and distributing according to the calculated ionization at 70 keV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337304
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  • 6
    Electronic Resource
    Electronic Resource
    Distributions of light ions and foil destruction after irradiation of organic polymers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 668-676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that light ions (6Li, 10B) distribute neither according to their calculated range nor to their nuclear damage distributions but according to their ionization distributions after implantation into organic polymers. Also, the profile of chemical destruction after low dose light ion implantation (typically 1012–1014 ions/cm2) into organic foils obeys the ionization distribution rather than the range or nuclear damage distributions. After annealing, or at higher implanted doses, a slight shift of the implantation or destruction profiles towards the nuclear damage distribution is found. The reason for this implantation behavior may be partly understood in terms of diffusion and subsequent recombination with the created radicals. Li and B distributions in carbon (which may be regarded as the final product of polymer destruction) show a shape which can be described by range profiles with subsequent diffusion and trapping at homogeneously distributed defects. In contrast to light ions, implanted heavy ions distribute in polymers essentially according to their range profiles, due to negligible diffusion after implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336180
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal behavior and range distribution of 209Bi implanted into the Al/V bilayer structure (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4431-4434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 350-keV 209Bi+ was implanted into an Al (1000 A(ring))/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (trim code). Diffusion coefficients for Bi in both the V substrate of the Al/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °C. The results show that the Bi ions follow a hindered diffusion at the Al film of the Al/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340161
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  • 8
    Electronic Resource
    Electronic Resource
    Implanted boron depth profiles in the AZ111 photoresist (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2083-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isotope 10B has been implanted into the photoresist AZ111 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 10B(n,α)7Li reaction. At 60 keV, the profile changes from a regular shape to one with an additional tail directed towards the surface. Despite the nonregular shape of the ion distributions, it is possible to extract the characteristic range parameters such as projected range Rp, most probable range Rˆ, and full width at half-maximum. Good agreement is found between the experimental results and the calculations by Ziegler, Biersack, and Littmark (ZBL). It is also shown that the tail distribution follows closely the ZBL calculated ionization profiles. A tentative explanation of this behavior is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341112
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of Xe post-bombardment on carbonitrides produced in a low-carbon nitrogen-implanted steel (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4487-4493 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Xe bombardment on carbonitrides produced by N implantation in a low-carbon steel are studied via conversion electron Mössbauer spectroscopy and nuclear reaction analysis. The results show two main features: dissolution and reprecipitation of the produced carbonitrides and modification of the thermal behavior of the precipitates. Recently we have performed similar experiments bombarding samples of the same steel with He and Ar. Comparison of the experiments shows that irradiation with Ar ions provides the best retention of carbonitrides at 450 °C. On the other hand, irradiation with Xe ions to the same dpa level is most effective in producing the dissolution and reprecipitation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346199
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  • 10
    Electronic Resource
    Electronic Resource
    Synthesis of GaN by N ion implantation in GaAs (001) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2699-2701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both the hexagonal and cubic GaN phases were synthesized in GaAs (001) by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.5×1017 cm−2, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 3×1017 cm−2, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114297
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