ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Conditions for the formation of defect-induced bound exciton (DIBE) emissions in GaAs were investigated by molecular beam epitaxial method. Growth was made on both A- and B-polarity substrates with (321), (221), and (211) orientations. For A-polarity samples, (321)A and (211)A presented pronounced DIBE emissions. (221)A, however, exhibited no DIBE emission, instead it presented a dominant carbon donor-carbon acceptor pair emission together with a small hump due to carbon donor-related bound exciton emissions. For B-polarity specimens, DIBE was completely vanished in all the three samples. It was theoretically demonstrated that DIBE is formed only when double-handed Ga adatom site is existing.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108629
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