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  • 1
    Electronic Resource
    Electronic Resource
    Models for electron mobility and temperature of two-dimensional electron gas at low and moderate fields (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4814-4816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model of electron temperature and electron mobility as a function of electric field has been formulated for GaAs/AlxGa1−xAs heterostructures. The predicted results from this model agree well with available measurements at low and moderate fields (E〉200 V/cm). Furthermore, this model enables us to predict the electron temperature and mobility at high fields which are crucial to the understanding of the potential performance of GaAs/AlxGa1−xAs modulation-doped field effect transistor and other novel heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335298
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  • 2
    Electronic Resource
    Electronic Resource
    Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1961-1963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique, namely bonding by atomic rearrangement has been invented to realize high quality heteroepitaxy for lasers and optoelectronics. High performance lasers of 1.5 μm wavelength have been fabricated on GaAs substrates using this method. The laser has the same threshold current and quantum efficiency as lasers on InP substrates. No performance degradation has been observed. The transmission electron microscopic results show that the heteroepitaxy is excellent, without a single threading dislocation or stacking fault.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105032
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  • 3
    Electronic Resource
    Electronic Resource
    Multilayer thermionic cooler with a varying current density (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1767-1769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multilayer structure for thermionic cooling is proposed. This structure uses semiconductor heterojunctions for barriers and a varying current density across the junctions. Compared with the conventional multijunction thermionic cooler with a uniform current density, the design can yield a significantly higher temperature gradient, thus cooling more effectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123682
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of wafer-bonded GaAs/Si heterojunctions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2337-2339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports on the fabrication and electrical characterization of wafer-fused GaAs/Si heterojunctions. A detailed study of the effect of surface preparation on bonding GaAs to Si was performed. The current–voltage (I–V) characteristics of both n-GaAs/n-Si and p-GaAs/p-Si were measured from 77 K to room temperature. The forward I–V characteristics were analyzed using a numerical model that includes thermionic emission across the heterojunction. Specifically, a p-GaAs/p-Si heterointerface of high electrical quality was obtained by direct hydrophobic bonding. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122454
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of InGaAs multi-quantum wells at 1.3 μm wavelength on GaAs compliant substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2598-2600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs multiple quantum wells at 1.3 μm wavelength have been grown on a twist-bonded GaAs compliant substrate. The GaAs compliant substrate contains a 30 Å GaAs thin layer bonded to a GaAs bulk substrate with a 22-degree angle. Nomarski phase contrast microscopy, transmission electron microscopy (TEM), and photoluminescence were used to characterize the heteroepitaxial layers. The smooth and crosshatch-free surface morphology, dislocation-free cross-sectional TEM, and strong luminescence intensity all provide convincing evidences for substantial improvement of the quality of heteroepitaxial material using the compliant substrate technique. Research is underway to apply the concept and technique of compliant substrate to Si and other materials. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121429
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  • 6
    Electronic Resource
    Electronic Resource
    Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 25-27 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We proposed and demonstrated a novel design for long wavelength (1.3 μm) vertical-cavity surface-emitting lasers (VCSELs). In this design, oxygen-implanted current-confinement regions were formed in a GaAs/AlGaAs Bragg reflector which is the bottom mirror wafer bonded to an AlGaInAs/InP cavity consisting of nine strain-compensated quantum wells. Room- temperature continuous-wave (cw) operation of 1.3 μm-VCSELs with a record low cw threshold current density of 1.57 kA/cm2 and a record low cw threshold current of 1 mA have been realized. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119459
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  • 7
    Electronic Resource
    Electronic Resource
    High-performance InGaAs photodetectors on Si and GaAs substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3936-3938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we demonstrate record low dark current operation of InGaAs (1.55 μm) p-i-n photodetectors on both silicon and gallium arsenide substrates using a wafer bonding technique. The photodetectors were made by first bonding the p-i-n epitaxial layers to the Si and GaAs substrate followed by chemical removal of the host (InP) substrate from the p-i-n structure. The photodetector was then fabricated atop the newly exposed p-i-n epilayers. Dark currents of as low as 57 pA on a GaAs substrate and 0.29 nA on a Si substrate were measured under 5 V reverse bias. The responsivity at 1.55 μm wavelength was measured to be 1 A/W, corresponding to an external quantum efficiency of 80%. The series resistance measured across the bonded interface gave 17 Ω on GaAs and 350 Ω on Si, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114410
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  • 8
    Electronic Resource
    Electronic Resource
    Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high-quality GaAs on (100) Si substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1386-1388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Type-I dislocations at the GaAs/Si interface are beneficial because they effectively relax the mismatched stress, but do not propagate into the GaAs film. Accordingly, the best way to grow a low defect density GaAs film on a Si substrate is to form as many as possible type-I dislocations or, equivalently, to suppress other kinds of defects. The high-resolution transmission electron microscopy study shows that most of the type-I dislocations are formed at the double step on a Si surface. It is further determined that the silicon surface steps are mainly due to the substrate tilting instead of the heating before growth. Based on our study, the (100) Si substrate with double steps along both [110] and [11¯0] axes provides the best condition for growing low defect density GaAs on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99124
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  • 9
    Electronic Resource
    Electronic Resource
    GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1242-1244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The GaAs-on-InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides on misoriented InP substrates exhibited a significantly lower loss. Based on photoluminescence studies, we attribute the propagation loss in both samples mainly to optical absorption by crystal defects. Defect densities of 4×1017 cm−3 and 2×1017 cm−3 are estimated for material on (100) and 3° off (100) substrates, respectively. Such heteroepitaxial waveguides may have applications in long-wavelength photonic integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100026
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  • 10
    Electronic Resource
    Electronic Resource
    High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 156-158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality GaAs quantum well lasers grown on (100) and 3°-off (100)InP substrates by organometallic chemical vapor deposition were investigated for the first time. 50-μm-wide broad-area gain-guided lasers were fabricated using preferential proton implantation. Low threshold densities, 800 and 1080 A/cm2, were obtained at room temperature for lasers with 1.25-mm-long cavities grown on 3°-off (100) and (100) oriented InP substrates, respectively. High quantum efficiency of 36% and nearly single longitudinal mode emission were also achieved from these lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101214
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