Publication Date:
2013-06-21
Description:
Article Exploiting as many degrees of freedom of the electron as possible will make future electronic devices more versatile. Here, the authors show that coupling of spin, layer pseudospin and valley degrees of freedom in transition metal dichalcogenide bilayers makes them a promising platform for this purpose. Nature Communications doi: 10.1038/ncomms3053 Authors: Zhirui Gong, Gui-Bin Liu, Hongyi Yu, Di Xiao, Xiaodong Cui, Xiaodong Xu, Wang Yao
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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