ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract AlN and SiC can react and form a solid solution at temperatures above 1800 °C, a result that may be beneficial for sintering silicon carbide ceramics. The pressureless sintered AlN–SiC multiphase ceramics have reached high density at a temperature of 2100 °C for 1 hr in Ar. Analytical scanning transmission electron microscopy was then used to determine the grain boundary, fracture surface, and the local compositions. Because AlN has a higher solid vaporization pressure than SiC, the vaporization rate of the AlN solid would far exceed that of SiC at a sintering temperature. The vaporizing AlN was deposited on the surface of SiC powder; SiC grains then elongated in a random arrangement. The form of elongated rod crystals of 4H SiC is 5 to 8 μm in length and 1 μm in width. It resulted in the sample fracture section producing pulling-out and a strong tearing-open effect. The bending strength and the fracture toughness of the material obtained are 420 MPa and 4.40 MPa × m1/2, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1004761308299
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