Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 3596-3597
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage profiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses (approximately-greater-than)2×1015 cm−2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111209
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