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  • American Institute of Physics (AIP)  (11)
  • 1990-1994  (11)
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Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Effect of hydrogenation on the luminescence of strained Si1−xGex alloy layers grown by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1279-1282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick Si1−xGex strained alloy layers grown by molecular beam epitaxy (MBE) are investigated using photoluminescence (PL) spectroscopy. Near-band-edge luminescence with well resolved phonon structures is observed for both as-grown and deuterated samples. The low energy broad band frequently encountered in MBE-grown alloy layers is shown to be annihilated by deuteration, giving rise to the no-phonon and phonon-assisted near-band-edge PL peaks. The broad band recovers by annealing at T≥360 °C while the intensity of the near-band-edge luminescence vanishes. Secondary ion mass spectroscopy and the effect of deuterium passivation are used to help locate and assign the defects responsible for the low PL efficiency of MBE-grown thick SiGe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354932
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of compositionally graded Si1−xGex alloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1952-1956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectroscopy, cathodoluminescence (CL) spectroscopy and imaging, and preferential defect etching and optical microscopy have been used to characterize compositionally graded Si1−xGex alloy layers grown by molecular beam epitaxy. Si1−xGex capping layers grown on the compositionally graded layers have low threading dislocation densities, and both PL and low-beam energy CL spectra show bound exciton luminescence features identical with those observed in bulk Si1−xGex alloys and relatively weak dislocation related D-band features. Increasing the beam energy increases the relative strength of the D bands in the CL spectra, indicating that they are associated with the misfit dislocations in the compositionally graded layer. This has been confirmed by combined chemical etching and PL spectroscopy measurements. The misfit dislocations can be observed by monochromatic CL imaging at a high-beam energy using a narrow band pass filter centerd on the D4 band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353185
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of Si/Si1−xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 607-609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize fully strained SiGe quantum wells grown on Si. At T≈5 K, the CL spectra contain only band edge luminescence features. Monochromatic imaging with the no-phonon line attributed to the bound excitons in the quantum well, has shown that the distribution of the luminescence from the wells is not uniform. The thinnest well (33 A(ring)) contained a low density of nonradiative (luminescence reduction up to 100%) spots 40–100 μm in size. The thickest well (500 A(ring)) contained similar nonradiative spots and also dark line features oriented along the 〈110〉 directions. These dark line features are areas of nonradiative recombination (up to 70%) and have been identified by transmission electron microscopy as misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111064
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by cathodoluminescence imaging and the electron beam induced current technique (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2085-2087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Misfit dislocations in as-grown and Ni-contaminated Si/SiGe epilayers have been characterized by cathodoluminescence (CL) spectroscopy, cathodoluminescence imaging, and the electron beam induced current technique (EBIC). Dislocations in the as-grown layers had no radiative recombination (D bands) and no detectable room temperature EBIC contrast. Following Ni contamination the D bands were observed and the EBIC contrast increased. CL dark line contrast is observed by monochromatic imaging of the Si substrate luminescence. The CL dark line contrast was observed from all the dislocations, whether contaminated or as grown. The CL dark line contrast and EBIC contrast show a 1:1 correspondence of the nonradiative recombination at the misfit dislocation and also a semiquantitative agreement with the variation in measured contrast of the individual dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110600
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  • 5
    Electronic Resource
    Electronic Resource
    Traps for excitons and interstitial atoms in edge-defined film-fed growth silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1783-1785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show from the power dependence of photoluminescence of as-grown edge-defined film-fed film-grown silicon (EFG Si) that there are few additional nonradiative traps for excitons in EFG Si relative to electronic grade silicon. The first application of cathodoluminescence topography to EFG Si reveals only a small (10%) decrease in the luminescence at grain boundaries from radiation-damage centers at grain boundaries. A radiation-damage complex formed by migration of an interstitial carbon atom is shown to be created, and also destroyed, at rates very similar to those in electronic grade silicon, indicating the absence of interstitial traps specific to EFG Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110661
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  • 6
    Electronic Resource
    Electronic Resource
    Cathodoluminescence imaging and spectroscopy of dislocations in Si and Si1−xGex alloys (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1087-1089 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations in float-zone Si which has been plastically deformed and deliberately copper contaminated, and misfit dislocations in a relaxed Si1−xGex alloy layer grown on a Si substrate by molecular beam epitaxy, have been investigated by monochromatic and panchromatic cathodoluminescence imaging and by cathodoluminescence spectroscopy. The measurements show that the D3 and D4 luminescence features originate on the slip lines in plastically deformed Si and at the misfit dislocations in the Si1−xGex alloy layer whereas the D1 and D2 bands are dominant between the slip lines and the misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107676
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  • 7
    Electronic Resource
    Electronic Resource
    Metal-induced dislocation nucleation for metastable SiGe/Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 829-831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism of misfit dislocation nucleation is demonstrated. Deliberate contamination with approximately 0.003 monolayers of Cu and subsequent annealing at 600 °C is shown by transmission electron microscopy, photoluminescence, and defect etching to produce dislocation half loops in a 1.1 μm layer of Si0.93Ge0.07 on a silicon substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105249
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of hydrogen on the electrical and optical activity of misfit dislocations in Si/SiGe epilayers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2804-2806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectroscopy and electron-beam-induced current (EBIC) technique have been used to characterize misfit dislocations in Si/SiGe epilayers following hydrogen plasma treatment (T=200–500 °C). Low temperature EBIC measurements showed that the majority (90%) of shallow levels associated with misfit dislocations were not passivated, whereas deeper midgap levels are readily passivated. The dislocation (D bands) related luminescence features were all reduced in intensity following hydrogen treatment; at T=300 °C the D1 was preferentially passivated and could no longer be observed, whereas the other D bands although reduced in intensity could still be observed. Depassivation experiments showed that following posthydrogenation annealing at 600 °C the deep levels passivated as measured by EBIC and the D bands are regenerated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112571
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  • 9
    Electronic Resource
    Electronic Resource
    New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2579-2581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements have been made on Si/Ge short period superlattice structures grown on a SiGe alloy buffer layer and on a similar SiGe alloy layer without a superlattice. Using an InSb detector with a low energy cutoff at ∼450 meV, the major luminescence features observed were two broad bands with maximum intensities at ∼530 and ∼720 meV. The luminescence intensity was found to vary with the superlattice composition but was substantially stronger for the SiGe alloy layer without a superlattice. We ascribe these luminescence features to defects in the SiGe alloy layers. This is supported by the observation that the introduction of deliberate copper contamination at 600 °C dramatically increases the photoluminescence signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105908
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  • 10
    Electronic Resource
    Electronic Resource
    Luminescence of strained Si1−xGex alloy layers grown by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2586-2588 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick Si1−xGex strained layers grown by molecular beam epitaxy on Si(100) oriented substrates are investigated by photoluminescence spectroscopy. Well resolved near-band-gap luminescence is clearly observed in samples with a Ge concentration ranging from 10% to 20% for both as-grown and thermal annealed samples. The phonon assisted transitions are clearly identified and the phonon structure of the spectrum is resolved. The effects of deuterium passivation and rapid thermal annealing are studied and an enhancement of the intrinsic excitonic luminescence by more than a factor of three is observed upon deuteration. These results indicate that atomic deuterium is efficient in passivating nonradiative recombination centers responsible for the quenching of the band edge luminescence. The exciton energy band gap is shown to have a quasilinear dependence with Ge fraction between 9% and 26%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108135
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