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  • 1995-1999  (617)
  • 1
    Electronic Resource
    Electronic Resource
    Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1292-1297 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses and hence different degrees of strain relaxation. Our results show that, at early stages of strain relaxation, the films contain mosaic regions laterally separated by perfect regions. This is because the mosaic structure caused by a misfit dislocation is effectively localized in a lateral range of the layer thickness. Therefore, far from the dislocations, the film is virtually a perfect crystal. With the increase in the degree of strain relaxation, and consequently in the dislocation density, the mosaic regions of the layer expand while the perfect regions shrink and finally vanish completely. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370884
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced hydrogen desorption from Si sites during low-temperature Si1−xGex growth by disilane and solid-Ge molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6920-6922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1−xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370106
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  • 3
    Electronic Resource
    Electronic Resource
    Two-dimensional analysis of the power transfer between crossed laser beams (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 2686-2692 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The power transfer between crossed laser beams made possible by an ion-acoustic wave is studied. A simple formula is derived for the steady-state power transfer, which depends on two dimensionless parameters: the ratio of the incident beam intensities and the normalized beamwidth. Numerical simulations show that the transient power transfer is larger than the steady-state power transfer and usually oscillates in time. The convective depletion of the higher-frequency beam saturates the power transfer more quickly than the damping of the ion-acoustic wave. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871721
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  • 4
    Electronic Resource
    Electronic Resource
    Near-forward stimulated Brillouin scattering (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 4227-4231 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatiotemporal evolution of near-forward stimulated Brillouin scattering (SBS) is studied in detail. For large scattering angles SBS grows and saturates as a three-wave instability. For small scattering angles SBS begins to grow as a three-wave instability, then continues to grow and saturates as a four-wave instability. Expressions for the saturation time and steady-state gain exponent of SBS are derived for large and small scattering angles. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872584
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  • 5
    Electronic Resource
    Electronic Resource
    Trapped ion temperature gradient driven instabilities with bounce resonance (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 3757-3763 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A kinetic analysis of ion temperature gradient modes with the trapped ion bounce resonance in tokamaks is presented under the long-wavelength limit. The dispersion relations of the toroidal and slab branches are derived by employing two-scale expansion, and their eigenfunctions are obtained analytically. The growth rates and stability thresholds of the more unstable toroidal and slab ion modes are evaluated in the cases with and without trapped electron dynamics. It is found that the minority trapped ion bounce resonances possess approximately the same effects on the toroidal and slab ion modes as the majority ion transit resonances. The nonadiabatic trapped electron dynamics does also strongly affect the toroidal ion mode while it affects the slab branch, the trapped electrons have a destabilizing effect on these ion modes. In addition, the effects of trapped electron temperature gradient on the trapped ion temperature gradient modes are considered. For high collisionality, the trapped electron temperature gradient destabilizes toroidal and slab ion modes. On the contrary, it plays a role of stabilizing to the toroidal and slab ion modes in the case of very low collisionality. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871445
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  • 6
    Electronic Resource
    Electronic Resource
    Recording long-term optical images of a Brownian particle in a Paul trap essentially free of thermally induced positional noise (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3566-3571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show experimentally that the positional uncertainty in long-term images of a microparticle in a Paul trap in air can be reduced to the optical limit, and below the pseudopotential limit. For this damped system, far below any Mathieu instability, the particle's thermally induced positional noise is extremely sensitive to the phase of the driving field. Accumulating images strobed at the proper phase produces a long-term optical image which is essentially free of thermally induced positional noise. Although noise squeezing theory does not apply at such large dissipation, our results may be understood through recent theory of the Brownian parametric oscillator. Use of this theory coupled with our observations suggests that the extreme reduction in spatial variance observed by using our technique results from working in a low Reynolds number regime. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359932
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  • 7
    Electronic Resource
    Electronic Resource
    Current-density dependence of activation energy in high-Tc superconductor HgBa2Ca2Cu3O8+x (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6398-6401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real and imaginary parts of the ac susceptibility of high-Tc superconductor HgBa2Ca2Cu3O8+x were measured as a function of temperature in different ac fields and frequencies at a fixed dc field. The current-density dependence of activation energy was obtained in terms of nonlinear diffusion equation of vortices. The relaxation of the current density and the exponent μ of the glassy phase were deduced from the relation between the activation energy and the current density. In addition, the pinning energy and critical current density were estimated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359113
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  • 8
    Electronic Resource
    Electronic Resource
    Strain and structural characterization of Zn1−xCdxSe laser structures grown on GaAs and InGaAs (001) substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 81-88 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reciprocal space mapping has been used to investigate the strain status of microgun-pumped blue and blue-green laser structures. The devices exploit graded-index, separate confinement Zn1−xCdxSe/ZnSe heterostructures grown on InGaAs or GaAs substrates by molecular-beam epitaxy. The location of the reciprocal lattice point of the ZnSe buffer layer within a normally forbidden region of reciprocal space indicates that the ZnSe buffer layer is unusually strained, with an appreciable biaxial tensile strain despite the smaller lattice parameter of the III–V substrate relative to ZnSe. We associate such a phenomenon with the presence of the highly strained laser structure coupled with preferential strain relaxation at the II–VI/III–V heterointerface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362775
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  • 9
    Electronic Resource
    Electronic Resource
    Field-induced phase switching and electrically driven strains in sol-gel derived antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1171-1177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tin-modified lead zirconate titanate thin layers were prepared by a sol-gel method. A room- temperature antiferroelectric (AFE) phase composition Pb0.99Nb0.02[(Zr0.58Sn0.42)0.96Ti0.04] 0.98O3 was prepared and examined for weak- and high-field dielectric properties as a function of temperature, with emphasis on field-induced AFE-ferroelectric (FE) switching characteristics. Thin layers processed with a lead oxide cover coat were found to be free of any secondary phases and showed improved properties. Room-temperature values of dielectric constant K'=390 and saturation polarization Ps=20 μC/cm2 were obtained with field-induced strains up to 0.15% in submicron grain structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360353
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  • 10
    Electronic Resource
    Electronic Resource
    Impression and diffusional creep of anisotropic media (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 110-117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some diffusion problems in the impression and diffusional creep of anisotropic materials are analyzed. It is found that at the limit of low stress, both the diffusional creep rate and impression velocity are proportional to the applied stress. For a parallelepiped crystal under simple tension or compression in the Z direction, the diffusional creep rate depends on all three principal diffusivities, DX, DY, and DZ. Two limiting cases depend on the quantity (square root of)DXDY/DZ. When this quantity is large the creep rate is proportional to (square root of)DZ but when it is small the creep rate is independent of DZ. For a cylindrical crystal under tension or compression in the axial Z direction, the creep rate depends on Dr/DZ. When the ratio is large, the creep rate is the same as the isotropic case except that the effective diffusivity is (square root of)DrDZ. When the ratio is small, the creep rate is proportional to Dr and independent of DZ. For the impression creep of a half-space the punch velocity is proportional to the geometric mean of the principal diffusivities parallel and perpendicular to the loading direction, and inversely proportional to the punch dimension. For impression creep of a thin film deposited on an impermeable substrate under the same punching stress, the impression velocity is dependent only on the diffusivity parallel to the thin film, and inversely proportional to the square of the punch dimension. Without the substrate, the impression velocity is dependent only on the diffusivity perpendicular to the thin film, inversely proportional to the thickness of the film, and independent of the punch dimension. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359524
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