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  • Articles  (6)
  • Articles: DFG German National Licenses  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5185-5187 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that novel thickness-dependent film conductance measurements, taken in situ during deposition of NiO/Co/Cu/Co spin valves and compared with thickness-dependent microstructural characterization, indicate a qualitative failure of widely accepted semiclassical free-electron models of giant magnetoresistance (GMR). Both in situ Auger electron spectroscopy covering experiments and ex situ x-ray diffraction measurements of peak intensity for Co/Cu/Co films indicate that the defect concentration does not vary noticeably as a function of thickness. The microstructural measurements suggest that the bulk scattering parameters ρ and λ should be considered to be constant within each layer, and that the surface scattering parameter p does not change between layers. Under these constraints, it becomes difficult to fit even qualitatively the highly asymmetric scattering behavior measured during the formation of Co/Cu vs Cu/Co interfaces. Calculations incorporating realistic band structure resolve the observed inconsistency between free-electron model calculations and experiment. The asymmetry in scattering is understood here to arise simply from the higher density of unfilled d states in Co compared with Cu. © 2000 American Institute of Physics.
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used high-resolution transmission electron microscopy to compare the nanostructures of ion-beam and dc magnetron sputter-deposited giant magnetoresistive (GMR) spin valves and to correlate nanostructure with magnetic properties. Very low coercivities and strong exchange bias (〈8 Oe, 125 Oe) were achieved in ion-beam-deposited spin valves of the form NiFe(50)/Co(20)/Cu((approximately-greater-than)25)/Co(20)/NiFe(50)/FeMn(150)/Ta(30 A(ring)); these were compared with typical dc magnetron deposited structures of the same kind, both with and without a Ta seed layer, which exhibited similar and poorer exchange biasing but superior GMR ratios (to 8%.) Cross-sectional and plane-view samples were prepared of all three structures and examined by high-resolution electron microscopy. Near-perfect (111)-textured fcc metal and c-axis hcp Co columnar grains were revealed in the ion beam deposited sample, while some (10°) dispersion of this texture and random grain orientations were observed in the Ta-seeded and unseeded dc magnetron sputter-deposited samples, respectively. No amount of the α-FeMn (A12) phase was observed in any of the films. Exchange bias strengths and coercivity of the top Co/NiFe/FeMn layers thus correlate strongly with the degree of (111) texture. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4990-4992 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped NiO polycrystalline and {111} epitaxial films were grown by solid-source metalorganic chemical vapor deposition. The exchange field for NiFe on the polycrystalline Fe-doped NiO films increased with Fe content up to 18 at. % Fe, and then decreased with further increases in Fe content; the coercivity, blocking temperature, and grain size monotonically decreased with increasing Fe content. Similar results were observed in {111} films. The increase of the exchange field and the reduction of the blocking temperature are attributed to dissolved Fe atoms in the NiO. Low exchange coupling between NiFe and α-Fe2O3 may be responsible for the decrease of the exchange field in highly Fe-doped NiO films. Furthermore, 18% Fe-doped NiO showed an enhancement of exchange fields at thicknesses between 450 and 950 Å, and a considerable large training effect was observed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2893-2895 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new strain relief mechanism was observed in lattice mismatched epitaxial layers grown on (111) surfaces. Thin films of Si0.85Ge0.15 were epitaxilly grown by rapid thermal chemical vapor deposition on patterned (001) and planar (111) Si substrates. The (001) Si substrates were lithographically patterned and anisotropically etched to produce a line pattern of V-shaped grooves running in the [110] direction where the walls of the grooves were the {111} crystal planes. Cross-section and plan-view transmission electron microscopy studies revealed the presence of open-ended stacking fault tetrahedra in Si0.85Ge0.15 grown both on (111) Si wafers and the {111} side walls of the patterned (001) Si wafers. No defects were observed in the (001) portions of the films grown on nonplanar substrates.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7345-7348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a technique to measure directly the extent of surface scattering in giant magnetoresistance (GMR) spin valves. By monitoring both resistance and magnetoresistance during deposition, we may quantify any discontinuous changes in electron scattering associated with the formation of a given surface. Our technique is applied to the case of noble metal overlayer deposition (Ag and Cu) on NiO/Co/Cu/Co spin valves. We find no evidence to support the establishment of a specularly reflecting surface. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4007-4007 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The materials options to combine high giant magnetoresistance (GMR) ratios with soft magnetic properties have been relatively few, with NiFe providing low-field switching in the great majority of studies. These NiFe layers tend to be hardened appreciably when directly exchange coupled to Co to provide higher GMR ratios, as in (Ta)/NiFe/Co/Cu/Co/NiFe/FeMn spin valves. We propose magnetically soft, amorphous CoZr as a replacement couple to Co in these and other structures. While the high resistivity of amorphous films discourages their use as a single switching element, it favors their use as the drive layer for Co in a spin valve. Our transport simulations, using the Camley–Barnas model modified by Dieny,1 indicate that GMR ratios fall off much less steeply with increasing a-CoZr drive layer thickness than with NiFe drive layer thickness. Since lower coercivities are expected for higher fractions of the drive material, CoZr-based spin valves show promise in combining soft properties and high GMR ratios. We have demonstrated the combination of magnetic softness and high GMR ratio in our own CoZr-based spin valves. A free layer coercivity of 7.2 Oe and GMR ratio of 6.4% were achieved in a nominal structure of NiO(400)/Co(50)/Cu(20)/Co(25)/CoZr(200AA). Differential coercivity structures were deposited as well, using Cr underlayers to induce hardness of the bottom Co. An identical "active layer" structure of the form SiO2/Cr/Co(50)/Cu(20)/Co(25)/CoZr(200AA) demonstrates GMR ratios as high as 4.9%; removal of the interfacial Co layer reduces the GMR ratio to 2.8%, in accordance with our expectations. Discussion of optimization and detailed structural analysis will be presented in the full paper.© 1997 American Institute of Physics.
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