Publication Date:
2009-01-01
Description:
We consider the drift-diffusion model with avalanche generation for evolution in time of electron and hole densitiesn,pcoupled with the electrostatic potentialψin a semiconductor device. We also assume that the diffusion term is degenerate. The existence of local weak solutions to this Dirichlet-Neumann mixed boundary value problem is obtained.
Print ISSN:
1024-123X
Electronic ISSN:
1563-5147
Topics:
Mathematics
,
Technology