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  • 1
    Publication Date: 2016-11-29
    Description: Unintentionally doped (UID) AlGaN epilayers graded over Al compositions of 80%–90% and 80%–100% were grown by metal organic vapor phase epitaxy and were electrically characterized using contactless sheet resistance ( R sh ) and capacitance-voltage ( C–V ) measurements. Strong electrical conductivity in the UID graded AlGaN epilayers resulted from polarization-induced doping and was verified by the low resistivity of 0.04 Ω cm for the AlGaN epilayer graded over 80%–100% Al mole fraction. A free electron concentration ( n ) of 4.8 × 10 17  cm −3 was measured by C–V for Al compositions of 80%–100%. Average electron mobility ( μ ¯ ) was calculated from R sh and n data for three ranges of Al composition grading, and it was found that UID AlGaN graded from 88%–96% had μ ¯  = 509 cm 2 /V s. The combination of very large band gap energy, high μ ¯ , and high n for UID graded AlGaN epilayers make them attractive as a building block for high voltage power electronic devices such as Schottky diodes and field effect transistors.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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