Publication Date:
2016-07-19
Description:
The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics