Publication Date:
2016-05-20
Description:
In this paper, we propose a TaO x resistive switching random access memory (RRAM) device with operation-polarity-dependent self-selection effect by introducing highly doped silicon (Si) electrode, which is promising for large-scale integration. It is observed that with highly doped Si as the bottom electrode (BE), the RRAM devices show non-linear (〉10 3 ) I-V characteristic during negative Forming/Set operation and linear behavior during positive Forming/Set operation. The underling mechanisms for the linear and non-linear behaviors at low resistance states of the proposed device are extensively investigated by varying operation modes, different metal electrodes, and Si doping type. Experimental data and theoretical analysis demonstrate that the operation-polarity-dependent self-selection effect in our devices originates from the Schottky barrier between the TaO x layer and the interfacial SiO x formed by reaction between highly doped Si BE and immigrated oxygen ions in the conductive filament area.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
