Publication Date:
2016-04-23
Description:
We report the fabrication and device characteristics of exfoliated, few-layer, ReSe 2 field effect transistors (FET) and a method to improve contact resistance by up to three orders of magnitude using ultra-high-vacuum annealing (UHV). Many devices were studied in the absence of light and we found an average contact of 750 Ω · cm after UHV treatment. The median FET metrics were similar to other transition metal dichalcogenides: field effect mobility ∼6.7 cm 2 /V · s, subthreshold swing ∼1.2 V/decade, and I on /I off ∼ 10 5 . In devices with low R c current saturation was observed and is attributed to injection limited transport.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics