Publication Date:
2014-03-06
Description:
Vertical magnetization shift (M Shift ) coexisting with the conventional exchange bias fields was observed in the epitaxial bilayers of the ferromagnetic SrRuO 3 and the G-type antiferromagnetic La 0.3 Sr 0.7 FeO 3 grown on SrTiO 3 (111) substrate. We demonstrate this M Shift can be tuned from 5% to 36% by controlling the SrRuO 3 (4–50 nm) and La 0.3 Sr 0.7 FeO 3 (15–140 nm) layer thicknesses. The magnitude of M Shift exhibits inverse relation with the thickness of the SrRuO 3 layers; in contrast, it increases with increasing the La 0.3 Sr 0.7 FeO 3 layer thickness up to 105 nm. Thus observed M Shift was unambiguously corroborated by the thermoremanent data. This study emphasizes the presence of pinned moments not only at the interface but also across it as-well.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics