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  • 1
    Publication Date: 2014-03-04
    Description: Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB 2 films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al 2 O 3 (0001) substrates by using a pulsed laser deposition method, and then MgB 2 films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB 2 film decreased with increasing thickness of SiC buffer layer. However, the T c dropping went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB 2 films, which is believed to be related to the ordering of MgB 2 atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K -edge EXAFS measurements showed interesting ordering behavior of MgB 2 films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB 2 films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB 2 films seemingly have evident effects on the alteration of the local structure of the MgB 2 film.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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