Publication Date:
2014-03-01
Description:
We demonstrate a considerable suppression of the low-field leakage through a Y 2 O 3 topgate insulator on graphene by applying high-pressure O 2 at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance measurement for the monolayer graphene reveals the largest Fermi energy modulation ( E F = ∼0.52 eV, i.e., the carrier density of ∼2 × 10 13 cm −2 ) in the solid-state topgate insulators reported so far. HP-PDA is the robust method to improve the electrical quality of high- k insulators on graphene.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics