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Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique (2014)

American Institute of Physics (AIP)

In: Applied Physics Letters

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Publication Date: 2014-02-07

Description: P-type doping of GaN by pulsed sputtering deposition (PSD) at a low growth temperature of 480 °C and dramatic reduction in the growth process temperature for InGaN-based light-emitting diodes (LEDs) were achieved. Mg-doped GaN layers grown on semi-insulating GaN at 480 °C exhibited clear p-type conductivity with a hole concentration and mobility of 3.0 × 10 17 cm −3 and 3.1 cm 2 V −1 s −1 , respectively. GaN/In 0.33 Ga 0.67 N/GaN LEDs fabricated at 480 °C showed clear rectifying characteristics and a bright electroluminescence emission near 640 nm. These results indicate that this low temperature PSD growth technique is quite promising for the production of nitride-based light-emitting devices on large-area glass substrates.

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

Published by American Institute of Physics (AIP)

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