Publication Date:
2014-02-07
Description:
A long wavelength infrared minority electron unipolar photodetector based on InAs/GaSb type-II superlattices is demonstrated. At 77 K, a dark current of 3 × 10 −5 A/cm 2 and a differential resistance-area of 3700 Ω.cm 2 are achieved at the turn-on bias, with a 50%-cutoff of 10.0 μ m and a specific detectivity of 6.2 × 10 11 Jones. The dark current is fitted as a function of bias and temperature using a model combining generation-recombination and trap-assisted tunneling. Good agreement was observed between the theory and the experimental dark current.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics